Related papers: Saturated Ferromagnetism and Magnetization Deficit…
We report Curie temperatures up to 150 K in annealed Ga1-xMnxAs epilayers grown with a relatively low As:Ga beam equivalent pressure ratio. A variety of measurements (magnetization, Hall effect, magnetic circular dichroism and Raman…
High- and low-field magneto-transport measurements, as well as SQUID measurements of magnetization, were carried out on Ga1-xMnxAs epilayers grown by low temperature molecular beam epitaxy, and subsequently annealed under various…
We have studied the evolution of the magnetic, electronic, and structural properties of annealed epilayers of Ga1-xMnxAs grown by low temperature molecular beam epitaxy. Annealing at the optimal temperature of 250 C for less than 2 hours…
The influence of annealing parameters - temperature and time - on the magnetic properties of As-capped (Ga,Mn)As epitaxial thin films have been investigated. The dependence of the transition temperature (Tc) on annealing time marks out two…
We present the results of low temperature (LT) annealing studies of Ga1-xMnxAs epilayers grown by low temperature molecular beam epitaxy in a wide range of Mn concentrations (0.01<x<0.084). Transport measurements in low and high magnetic…
(Ga,Mn)As and related diluted magnetic semiconductors play a major role in spintronics research because of their potential to combine ferromagnetism and semiconducting properties in one physical system. Ferromagnetism requires ~1-10% of…
We report on a comprehensive combined experimental and theoretical study of Curie temperature trends in (Ga,Mn)As ferromagnetic semiconductors. Broad agreement between theoretical expectations and measured data allows us to conclude that…
The dependence of the magnetic anisotropy of As-capped (Ga,Mn)As epilayers on the annealing parameters - temperature and time - has been investigated. A uniaxial magnetic anisotropy is evidenced, whose orientation with respect to the…
We have studied the field dependence of the magnetization in epilayers of the diluted magnetic semiconductor Ga(1-x)Mn(x)As for 0.0135 < x < 0.083. Measurements of the low temperature magnetization in fields up to 3 T show a significant…
We report a clear correspondence between changes in the Curie temperature and carrier density upon annealing in epitaxially grown (Ga,Mn)As layers with thicknesses in the range between 5 nm and 20 nm. The changes are dependent on the layer…
Ferromagnetic properties of In1-xMnxAs thin films were investigated. Room temperature ferromagnetic order was observed in nominally single-phase films with x = 0.01-0.10. Magnetization measurements indicated that these In1-xMnxAs samples…
We report on a monotonic reduction of Curie temperature in dilute ferromagnetic semiconductor (Ga,Mn)As upon a well controlled chemical-etching/oxidizing thinning from 15 nm down to complete removal of the ferro- magnetic response. The…
A new scenario of the mechanism of intriguing ferromagnetic properties in Mn-doped magnetic semiconductor (Ga,Mn)As is examined in detail. We find that magnetic features seen in zero-field cooled and field cooled magnetizations are not…
Kerr rotation and Superconducting QUantum Interference Device (SQUID) magnetometry measurements were performed on ultrathin (Ga$_{0.95}$Mn$_{0.05}$)As layers. The thinner layers (below 250 \AA) exhibit magnetic properties different than…
We provide experimental evidence that the upper limit of ~110 K commonly observed for the Curie temperature T_C of Ga(1-x)Mn(x)As is caused by the Fermi-level-induced hole saturation. Ion channeling, electrical and magnetization…
We present the magnetotransport properties of very thin (5 to 15 nm) single (Ga,Mn)As layers grown by low temperature molecular beam epitaxy. A lower (Ga,Mn)As thickness limit of 5 nm for the ferromagnetic phase and the dependence of the…
We have studied the effects of capping ferromagnetic Ga(1-x)Mn(x)As epilayers with a thin layer of undoped GaAs, and we find that even a few monolayers of GaAs have a significant effect on the ferromagnetic properties. In particular, the…
Ion implantation of Mn ions into hole-doped GaP has been used to induce ferromagnetic behavior above room temperature for optimized Mn concentrations near 3 at.%. The magnetism is suppressed when the Mn dose is increased or decreased away…
X-ray diffraction, transmission electron microscopy, and magnetization measurements are employed to study the structural and magnetic properties of Mn-rich (Mn,Ga)As nanocrystals embedded in GaAs. These nanocomposites are obtained by…
Structural investigation of as-grown as well as annealed Ga(1-x)Mn(x)As epilayers was carried out using high resolution X-ray diffraction (XRD) measurements for a wide range of Mn concentrations (0.027<=x<=0.083), with special attention on…