Related papers: Finite-size effects in tunneling between parallel …
The edge of a two-dimensional electron system (2DES) in a magnetic field consists of one-dimensional (1D) edge-channels that arise from the confining electric field at the edge of the specimen$^{1-3}$. The crossed electric and magnetic…
A tunable directional coupler based on Coulomb Blockade effect is presented. Two electron waveguides are coupled by a quantum dot to an injector waveguide. Electron confinement is obtained by surface Schottky gates on single GaAs/AlGaAs…
This letter introduces a micromagnetic model able to characterize the magnetization dynamics in three terminal magnetic tunnel junctions, where the effects of spin-transfer torque and spin-orbit torque are taken into account. Our results…
We study the phase diagram of the inverted InAs/GaSb bilayer quantum wells. For small tunneling amplitude between the layers, we find that the system is prone to formation of an s-wave exciton condensate phase, where the spin-structure of…
We report the observation of an anomalous conductance plateau near G = 0.5 G0 (G0 = 2e2/h) in asymmetrically biased AlGaAs/GaAs quantum point contacts (QPCs), with in-plane side gates in the presence of lateral spin-orbit coupling. This is…
In this work, the changes in the energy of electrons and holes, oscillator strength and interband transition time when external fields are applied to a GaAs/AlGaAs semiconductor double ring grown by the droplet epitaxy technique are…
We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $\Delta V$ at the interface as high as 1.2mV for a current…
The magnitude of spin accumulation created in semiconductors by electrical injection of spin-polarized electrons from a ferromagnetic tunnel contact is investigated, focusing on how the spin signal detected in a Hanle measurement varies…
We study the effects of electron-electron interactions on the energy levels of GaAs quantum wires (QWs) using finite-bias spectroscopy. We probe the energy spectrum at zero magnetic field, and at crossings of opposite-spin-levels in high…
A minority-spin resonant state at the Fe/GaAs(001) interface is predicted to reverse the spin polarization with voltage bias of electrons transmitted across this interface. Using a Green's function approach within the local spin density…
We present a microscopic model for a line junction formed by counter or co-propagating single mode quantum Hall edges corresponding to different filling factors. The ends of the line junction can be described by two possible current…
Quantum phase interference and spin-parity effects are studied in biaxial molecular magnets in a magnetic field at an arbitrarily directed angle. The calculations of the ground-state tunnel splitting are performed on the basis of the…
We consider the resonant tunneling through a multi-level system. It is demonstrated that the resonant current displays quantum interference effects due to a possibility of tunneling through different levels. We show that the interference…
A novel method for detecting Luttinger-liquid behavior is proposed. The idea is to measure the tunneling conductance between a quantum wire and a parallel two-dimensional electron system as a function of both the potential difference…
Remarkable nonlinearities in the differential tunneling conductance between fractional quantum Hall edge states at a constriction are observed in the weak-backscattering regime. In the $\nu $ = 1/3 state a peak develops as temperature is…
We study the spin and charge dynamics of electrons in n-doped II--VI semiconductor multiple quantum wells when one or more quantum wells are doped with Mn. The interplay between strongly nonlinear inter-well charge transport and the large…
Quantum noise with exchange and tunneling is studied within time-dependent wave packets. A novel expression for the quantum noise of two identical particles injected simultaneously from opposite sides of a tunneling barrier is presented.…
Spin-dependent tunneling through an indirect bandgap barrier like the GaAs/AlAs/GaAs heterostructure along [001] direction is studied by the tight-binding method. The tunneling is characterized by the proportionality of the Dresselhaus…
We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a large tunneling magnetoresistance (up to 30%) at low…
In this paper, bound states energies and corresponding wave functions of H-shaped quantum wires are calculated numerically in the presence of external magnetic and electric fields and within the Landau gauge. With a suitable definition of…