Related papers: $\nu=2$ Bilayer Quantum Hall System in Tilted Magn…
The helical edge states in a quantum spin Hall insulator are presumably protected by time- reversal symmetry. However, even in the presence of magnetic field which breaks time-reversal symmetry, the helical edge conduction can still exist,…
We study bilayer quantum Hall systems at total Landau level filling factor $\nu=1$ in the presence of interlayer tunneling and coupling to a dissipative normal fluid. Describing the dynamics of the interlayer phase by an effective quantum…
Bilayer two-dimensional electron systems formed by a thin barrier in the GaAs buffer of a standard heterostructure were investigated by magnetotransport measurements. In magnetic fields oriented parallel to the electron layers, the…
We re-examine the nature of the ground states of bilayer graphene at odd integer filling factors within a simplified model of nearly degenerate $n=0$ and $n=1$ Landau levels. Previous Hartree-Fock studies have found that ferroelectric…
We numerically study a 5/2 fractional quantum Hall system with even number of electrons using the exact diagonalization where both the strong Landau level (LL) mixing and a finite width of the quantum well have been considered and adapted…
We present a theoretical study of an interaction-driven quantum phase diagram of twisted bilayer MoTe$_2$ at hole filling factor $\nu_h=1$ as a function of twist angle $\theta$ and layer potential difference $V_z$, where $V_z$ is generated…
We investigated the behavior of fractional quantum Hall (FQH) states in a two-dimensional electron system with layer thickness and an in-plane magnetic field. Our comparisons across various filling factors within the first Landau level…
We present a microscopic theory of the Hall current in the bilayer quantum Hall system on the basis of noncommutative geometry. By analyzing the Heisenberg equation of motion and the continuity equation of charge, we demonstrate the…
In quantum Hall systems with two narrow constrictions, tunneling between opposite edges can give rise to quantum interference and Aharonov-Bohm-like oscillations of the conductance. When there is an integer quantized Hall state within the…
The tunneling conductance between two parallel 2D electron systems has been measured in a regime of strong interlayer Coulomb correlations. At total Landau level filling $\nu_T=1$ the tunnel spectrum changes qualitatively when the boundary…
The $\nu = 0$ quantum Hall state of bilayer graphene is a fertile playground to realize many-body ground states with various broken symmetries. Here we report the experimental observations of a previously unreported metallic phase. The…
Effect of interlayer tunneling in the double-layer fractional quantum Hall system at the total Landau level filling of $\nu=1/m$ ($m$: odd integer) is analyzed with the composite-fermion approach in which the flux attachment is directly…
This paper considers a system of two parallel quantum Hall layers with total filling factor $0$ or $1$. When the distance between the layers is small enough, electrons and holes in opposite layers form inter-layer excitons, which have a…
Motivated to understand the nature of the strongly insulating $\nu=0$ quantum Hall state in bilayer graphene, we develop the theory of the state in the framework of quantum Hall ferromagnetism. The generic phase diagram, obtained in the…
A quantum Hall system which is divided into two laterally coupled subsystems by means of a tunneling barrier exhibits a complex Landau level dispersion. Magnetotunneling spectroscopy is employed to investigate the small energy gaps which…
We study the behavior of the extended states of a two-dimensional electron system in silicon in a magnetic field, B. Our results show that the extended states, corresponding to the centers of different Landau levels, merge with the lowest…
The Hall conductivity $\sigma_{xy}$ of many condensed matter systems presents a step structure when a uniform perpendicular magnetic field is applied. We report the quantum Hall effect in buckled AB-bottom-top bilayer silicene and its…
We uncover a new origin of the planar Hall effect - as an intrinsic property of layer coherent electrons - that exists even in bilayer and trilayer atomically thin limit. It reforms the existing theories requiring three-dimensional orbital…
The relativistic-like behavior of electrons in graphene significantly influences the interaction properties of these electrons in a quantizing magnetic field, resulting in more stable fractional quantum Hall effect states as compared to…
Several recent works have proposed that electron-electron interactions in bilayer graphene can be tuned with the help of external parameters, making it possible to stabilize different fractional quantum Hall states. In these prior works,…