Related papers: Mesoscopic Rectifiers Based on Ballistic Transport…
We illustrate how classical chaotic dynamics influences the quantum properties at mesoscopic scales. As a model case we study semiclassically coherent transport through ballistic mesoscopic systems within the Landauer formalism beyond the…
By combining quantum simulations of electron transport and scanning-gate microscopy, we have shown that the current transmitted through a semiconductor two-path rectangular network in the ballistic and coherent regimes of transport can be…
In a mesoscopic conductor electric resistance is detected even if the device is defect-free. We engineer and study a cold-atom analog of a mesoscopic conductor. It consists of a narrow channel connecting two macroscopic reservoirs of…
Semiclassical methods are extremely valuable in the study of transport and thermodynamical properties of ballistic microstructures. By expressing the conductance in terms of classical trajectories, we demonstrate that quantum interference…
We consider the steady-state nonequilibrium behavior of mesoscopic superconducting wires connected to normal-metal reservoirs. Going beyond the diffusive limit, we utilize the quasiclassical theory and perform a self-consistent calculation…
Having driven a large part of the decade's progress in physics, nanoelectronics is now passing from today's realm of the extraordinary to tomorrow's commonplace. This carries the problem of turning proofs of concept into practical…
We study the influence of a tunnel barrier on the quantum transport through a circular cavity. Our analysis in terms of classical trajectories shows that the semiclassical approaches developed for ballistic transport can be adapted to deal…
A unified theoretical description of ballistic and diffusive carrier transport in parallel-plane semiconductor structures is developed within the semiclassical model. The approach is based on the introduction of a thermo-ballistic current…
The paper discusses dynamics of quantum measurements in mesoscopic solid-state systems. The aim is to show how the general ideas of the quantum measurement theory play out in the realistic models of actual mesoscopic detectors. The two…
We investigate the nonlinear current-voltage characteristic of mesoscopic conductors and the current generated through rectification of an alternating external bias. To leading order in applied voltages both the nonlinear and the rectified…
We present evidence for a counter-intuitive behavior of semiconductor mesoscopic networks that is the analog of the Braess paradox encountered in classical networks. A numerical simulation of quantum transport in a two-branch mesoscopic…
The intermediate transport regime in nanoscale transistors between the fully ballistic case and the quasi equilibrium case described by the drift-diffusion model is still an open modeling issue. Analytical approaches to the problem have…
We show that by adding only two fitting parameters to a purely ballistic transport model, we can accurately characterize the current-voltage characteristics of nanoscale MOSFETs. The model is an extension to a ballistic model (J. Appl.…
We propose the possibilities of designing nano-scale rectifiers using mesoscopic rings. A single mesoscopic ring is used for half-wave rectification, while full-wave rectification is achieved using two such rings and in both cases each ring…
We studied theoretically ballistic electronic transport in a proposed mesoscopic structure - Quantum Cable. Our results demonstrated that Qauntum Cable is a unique structure for the study of mesoscopic transport. As a function of Fermi…
We consider the problem of electronic quantum transport through ballistic mesoscopic systems with chaotic dynamics, connected to a three-terminal architecture in which one of the terminals has a tunnel barrier. Using a semiclassical…
We present a detailed microscopic study of quasi-ballistic transport in deep submicron semiconductor channels. In particular, we study the crossover between the diffusive and ballistic regimes of transport and identify signatures in the…
In this work, we investigate the transport phenomena in compound semiconductor material based buried channel Quantum Well MOSFET with a view to developing a simple and effective model for the device current. Device simulation has been…
The ballistic performance of electron transport in nanowire transistors is examined using a 10 orbital sp3d5s* atomistic tight-binding model for the description of the electronic structure, and the top-of-the-barrier semiclassical ballistic…
The nonlinear transport regime is manifested in the nonlinear current-voltage characteristic of the system. An example of such a nonlinear regime is a setup in which current is injected into the sample and the measured voltage drop is…