Related papers: Reply to cond-mat/0111504
We investigate the effect of magnetic impurities on the local quasiparticle density of states (LDOS) in iron-based superconductors. Employing the two-orbital model where 3$d$ electron and hole conduction bands are hybridizing with the…
Altermagnetic superconductors offer the possibility of exploring unconventional superconductivity, including topological states and finite-momentum superconductivity, with promising applications in spintronics and quantum information.…
While standard scaling arguments show that a system of non-interacting electrons in two dimensions and in the presence of uncorrelated disorder is insulating, in this work we discuss the case where inter-impurity correlations are included.…
We investigate nonmagnetic impurity effects in two-band superconductors, focusing on the effects of interband scatterings. Within the Born approximation, it is known that interband scatterings mix order parameters in the two bands. In…
With the aim at understanding the non-monotonic $d_{x^{2}-y^{2}}$-wave gap, we analyze the local electronic structure near impurities in the electron-doped cuprate superconductors. We find that the local density of states near a…
We investigate quantum transport in an off-diagonal Aubry--Andr\'e--Harper chain. The periodic hopping modulation generates effective internal boundaries that strongly influence the transmission characteristics. We show that edge, in-band…
We present a theory of the Anomalous Hall Effect (AHE) in ferromagnetic (Ga,Mn)As in the regime when conduction is due to phonon-assisted hopping of holes between localized states in the impurity band. We show that the microscopic origin of…
We study the effects of charged impurity scattering on the electronic transport properties of <110>-oriented Si nanowires in a gate-all-around geometry, where the impurity potential is screened by the gate, gate oxide and conduction band…
Experimental evidence of electron spin precession during travel through the phosphorus-doped Si channel of an all-electrical device simultaneously indicates two distinct processes: (i) short timescales (~50ps) due to purely conduction-band…
We consider theoretically effects of random charged impurity disorder on the {\it quality} of high-mobility two dimensional (2D) semiconductor structures, explicitly demonstrating that the sample mobility is not necessarily a reliable or…
We study the one-dimensional tight-binding models which include a slowly varying, incommensurate off-diagonal modulation on the hopping amplitude. Interestingly, we find that the mobility edges can appear only when this off-diagonal…
We observe a complex change in the hopping exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying a gate voltage and thermally drifting…
Motivated by anomalously large conductivity anisotropy in layered materials, we propose a simple model of randomly spaced potential barriers (mimicking stacking faults) with isotropic impurities in between the barriers. We solve this model…
The electronic structure of diluted magnetic semiconductors is studied, especially focusing on the hole character. The Haldane-Anderson model is extend to a magnetic impurity, and is analyzed in the Hartree-Fock approximation. Due to the…
The quasiparticle states around a nonmagnetic impurity in electron-doped iron-based superconductors with spin-density-wave (SDW) order are investigated as a function of doping and impurity scattering strength. In the undoped sample, where a…
The two-dimensional Hubbard model with a bimodal distribution of on-site interactions, P(U_i) = (1-f)\delta(U_i-U) + f\delta(U_i), is studied using a finite temperature quantum Monte Carlo technique and dynamical mean-field theory. We find…
Persistent current and low-field magnetic susceptibility in single-channel normal metal rings threaded by a magnetic flux $\phi$ are investigated within the tight-binding framework considering long-range hopping of electrons in the {\em…
We examine the effect of a single, non-magnetic impurity in a multiband, extended s-wave superconductor allowing for anisotropy of the gaps on the Fermi surfaces. We derive analytic expressions for the Green's functions in the continuum and…
Motivated by recent experimental progress on iron-based ladder compounds, we study the doped two-orbital Hubbard model for the two-leg ladder BaFe$_2$S$_3$. The model is constructed by using {\it ab initio} hopping parameters and the ground…
We investigate transport in phosphorus-doped buried-channel metal-oxide-semiconductor field-effect transistors at temperatures between 10 and 295 K. In a range of doping concentration between around 2.1 and 8.7 x 1017 cm-3, we find that a…