Related papers: Strain effects on silicon donor exchange: Quantum …
Excitations of impurity complexes in semiconductors can not only provide a route to fill the terahertz gap in optical technologies, but can also connect local quantum bits to scale up solid-state quantum-computing devices. However, taking…
Exchange interaction strongly influences the long-range behavior of localized electron orbitals and quantum tunneling amplitudes.In the Hartree-Fock approximation the exchange produces a power-law decay instead of the usual exponential…
Spectral diffusion arising from $^{29}$Si nuclear spin flip-flops, known to be a primary source of electron spin decoherence in silicon, is also predicted to limit the coherence times of neutral donor nuclear spins in silicon. Here, the…
Quantum dot arrays are a promising media for transferring quantum information between two distant points without resorting to mobile qubits. Here we study two most common disorders namely, hyperfine interaction and exchange coupling…
Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high fidelity quantum computing. We present a modification to the Si/SiGe…
The effect of the exchange interaction on the vibrational properties and on the electron-phonon coupling were investigated in several recent works. In most of the case, exchange tends to enhance the electron-phonon interaction, although the…
The fourfold degeneracy of the boron acceptor ground state in silicon, which is easily lifted by any symmetry breaking perturbation, allows for a strong inhomogeneous broadening of the boron-related electron paramagnetic resonance (EPR)…
An important challenge in silicon quantum electronics in the few electron regime is the potentially small energy gap between the ground and excited orbital states in 3D quantum confined nanostructures due to the multiple valley degeneracies…
Electron spins in silicon quantum dots are excellent qubits because they have long coherence times, high gate fidelities, and are compatible with advanced semiconductor manufacturing techniques. The valley degree of freedom, which results…
We study coherent backscattering phenomena from single and multiple stacking faults (SFs) in 3C- and 4H-SiC within density functional theory quantum transport calculations. We show that SFs give rise to highly dispersive bands within both…
The paper presents a theoretical description of the effects of strain induced by out-of-plane deformations on charge distributions and transport on graphene. A review of a continuum model for electrons using the Dirac formalism is…
Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit crystalline particles to investigate relevant defect localizations, emission…
Spin shuttling has crystalized as a powerful and promising tool for establishing intermediate-range connectivity in semiconductor spin-qubit devices. Although experimental demonstrations have performed exceptionally well on different…
Two closely spaced dangling bonds positioned on a silicon surface and sharing an excess electron are revealed to be a strong candidate for a charge qubit. Based on our study of the coherent dynamics of this qubit, its extremely high…
Scalable quantum processors require high-fidelity universal quantum logic operations in a manufacturable physical platform. Donors in silicon provide atomic size, excellent quantum coherence and compatibility with standard semiconductor…
Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor.…
Quantum dots are artificial atoms used for a multitude of purposes. Charge defects are commonly present and can significantly perturb the designed energy spectrum and purpose of the dots. Voltage controlled exchange energy in silicon double…
An atomistic model based on the Keating potential and the conjugate gradient method are used for simulation of the strain fields for single Ge/Si quantum dots. Calculations are performed in the cluster approximation using clusters…
A seemingly anomalous enhancement of electron mobility in strained silicon inversion layers at high sheet densities has exposed a conspicuous gap between device physics theory and experiment in recent years. We show that the root of this…
We perform electronic structure and quantum transport studies of dangling bond loops created on H-passivated Si(100) surfaces and connected to carbon nanoribbon leads. We model loops with straight and zigzag topologies as well as with…