Related papers: Two-dimensional metal in a parallel magnetic field
The three-dimensional Dirac semimetal is distinct from its two-dimensional counterpart due to its dimensionality and symmetry. Here, we observe that molecule-based quasi-two-dimensional Dirac fermion system, $\alpha$-(BEDT-TTF)$_2$I$_3$,…
Anomalous metallic behavior, marked by a saturating finite resistivity much lower than the Drude estimate, has been observed in a wide range of two-dimensional superconductors. Utilizing the electrostatically gated LaAlO3/SrTiO3 interface…
While electron-electron (e-e) interactions are known to influence resistivity in non-Galilean invariant two-dimensional (2D) systems, their effect on magnetotransport is not fully understood. Conventional models for simple bands often…
We have measured the resistance and the 1/f resistance noise of a two-dimensional low density hole system in a high mobility GaAs quantum well at low temperature. At densities lower than the metal-insulator transition one, the temperature…
From the Dirac equation of an electron in an anisotropic conduction band, the anisotropy of its motion dramatically affects its interaction with applied electric and magnetic fields. The quantum spin Hall effect (QSHE) is observable in…
Positive magnetoresistance (PMR) of a silicon MOSFET in parallel magnetic fields B has been measured at high electron densities n >> n_c where n_c is the critical density of the metal-insulator transition (MIT). It turns out that the…
The effect of a varying pseudo-magnetic field, which falls as $1/x^2$, on a two dimensional electron gas in graphene is investigated. By considering the second order Dirac equation, we show that its correct general solution is that which…
The magnetoresistance associated with quantum interference corrections in a high mobility, gated InGaAs/InP quantum well structure is studied as a function of temperature, gate voltage, and angle of the tilted magnetic field. Particular…
In a magnetic metal, the Hall resistance is generally taken to be the sum of the ordinary Hall resistance and the anomalous Hall resistance. Here it is shown that this empirical relation is no longer valid when either the ordinary Hall…
The effect of an in-plane magnetic field upon open quasi-two-dimensional electron and hole systems is investigated in terms of the carrier ground-state spectrum. The magnetic field, classified as weak from the viewpoint of correlation…
We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system…
By means of degenerate four-wave mixing (FWM), we investigate the quantum coherence of electron-hole pairs in the presence of a two-dimensional electron gas in modulation-doped GaAs-AlGaAs quantum wells in the quantum Hall effect regime.…
The low-temperature resistivity of a SiGe 2-dimensional hole gas has been studied using the gate controlled carrier density as a parameter. A metal-insulator transition is seen both in the temperature and in the electric field behaviour.…
The electronic properties of quasi two-dimensional multicomponent systems are investigated in the presence of a perpendicular magnetic field. The effects of the presence of a few valence band holes on the properties of quantum Hall systems…
We report on transport experiments through high-mobility gate-tunable undoped InSb QWs. Due to the elimination of any Si modulation doping, the gate-defined two-dimensional electron gases in the quantum wells display a significantly…
We have studied the tunneling properties of GaSb/AlSb/InAs/AlSb/GaSb heterostructures, in which electrons and holes accumulate in the InAs and GaSb regions respectively, under a magnetic field parallel to the interfaces. The low-temperature…
We study Berry curvature driven and Zeeman magnetic field dependent electric current responses of two-dimensional electron system with spin-orbit coupling. New non-dissipative component of the electric current occurring in the applied…
When an electron or hole is in a conduction band of a crystal, it can be very different from 2, depending upon the crystalline anisotropy and the direction of the applied magnetic induction ${\bf B}$. In fact, it can even be 0! To…
We present transport measurements performed in InAs/GaSb double quantum wells. At the electron-hole crossover tuned by a gate voltage, a strong increase in the longitudinal resistivity is observed with increasing perpendicular magnetic…
We study the influence of quantizing perpendicular magnetic fields on the ground state of a bilayer with electron and hole fluids separated by an opaque tunnel barrier. In the absence of a field, the ground state at low carrier densities is…