Related papers: Two-dimensional metal in a parallel magnetic field
We investigate the zero and finite temperature transport properties of a quasi-two-dimensional electron gas in a GaAs/InGaAs/GaAs quantum well under a magnetic field, taking into account many-body effects via a local-field correction. We…
In-plane magnetoconductance of InSb quantum wells (QW) containing a two dimensional electron gas (2DEG) is presented. Using a vector magnet, we created a magnetoconductance map which shows the suppression of weak antilocalization (WAL) as a…
At strong magnetic fields double-layer two-dimensional-electron-gas systems can form an unusual broken symmetry state with spontaneous inter-layer phase coherence. The system can be mapped to an equivalent system of pseudospin $1/2$…
We study interacting GaAs bilayer hole systems, with very small interlayer tunneling, in a counterflow geometry where equal currents are passed in opposite directions in the two, independently contacted layers. At low temperatures, both the…
We have studied the electrical conductivity of the electron gas in parallel electric and magnetic fields directed along the plane of a parabolic quantum well (across the profile of the potential). We found a general expression for the…
Experimental studies of the antiferromagnetic (AF) heavy fermion metal $\rm YbRh_2Si_2$ in a magnetic field $B$ indicate the presence of a jump in the Hall coefficient at a magnetic-field tuned quantum state in the zero temperature limit.…
The transport properties of the two-dimensional system in HgTe-based quantum wells containing simultaneously electrons and holes of low densities are examined. The Hall resistance, as a function of perpendicular magnetic field, reveals an…
Measurements in magnetic fields applied at a small angle with respect to the 2D plane of the electrons of a low-density silicon MOSFET indicate that the Hall coefficient is independent of parallel field from H=0 to $H>H_{sat}$, the field…
The low-temperature magnetoresistance of parabolic quantum wells displays pronounced minima between integer filling factors. Concomitantly the Hall effect exhibits overshoots and plateau-like features next to well-defined ordinary quantum…
Two-component conductors -- e.g., semi-metals and narrow band semiconductors -- often exhibit unusually strong magnetoresistance in a wide temperature range. Suppression of the Hall voltage near charge neutrality in such systems gives rise…
We investigate quantum Hall stripes under in-plane magnetic field $B_\parallel$ in a variable-density two-dimensional electron gas. At filling factor $\nu = 9/2$, we observe one, two, and zero $B_\parallel$-induced reorientations at low,…
We report interlayer tunneling measurements between very dilute two-dimensional GaAs hole layers. Surprisingly, the shape and temperature-dependence of the tunneling spectrum can be explained with a Fermi liquid-based tunneling model, but…
The effect of strong magnetic fields parallel to GaAs/AlGaAs interface on the subband structure of a 2D electron layer is ivestigated theoretically. The system with two levels occupied in zero magnetic field is considered and the magnetic…
Hall effect of two-dimensional holes that are spin-polarized by a strong parallel magnetic field was explored with a small tilt angle. The Hall resistivity increases nonlinearly with the magnetic field and exhibits negative corrections. The…
We identify a sizable non-linear anomalous Hall effect in the electrical response of spin-3/2 heavy holes in zincblende semiconductor nanostructures. The response is driven by a quadrupole interaction with the electric field enabled by…
We show that the interlayer tunneling I--V in double-layer quantum Hall states displays a rich behavior which depends on the relative magnitude of sample size, voltage length scale, current screening, disorder and thermal lengths. For weak…
The quantum Hall effect is usually observed when the two-dimensional electron gas is subjected to an external magnetic field, so that their quantum states form Landau levels. In this work we predict that a new phenomenon, the quantum…
Colossal negative magnetoresistance and the associated field-induced insulator-to-metal transition, the most characteristic features of magnetic semiconductors, are observed in n-type rare earth oxides and chalcogenides, p-type manganites,…
We report the first experimental observation of a characteristic nonlinear threshold behavior from dc dynamical response as an evidence for a Wigner crystallization in high-purity GaAs 2D hole systems in zero magnetic field. The system…
The electric conductivity behavior in the single and double tunnel-coupled quantum wells (QW) with different doping profile caused by impact of short pulses of the strong longitudinal (in the quantum wells plane) electric field has been…