Related papers: Zero-bias anomaly in two-dimensional electron laye…
We calculate the tunneling density of states for a Tomonaga-Luttinger liquid placed under a strong bias voltage. For the tunneling through a side-coupled point contact, one can observe the power law singularities in the tunneling density of…
We have fabricated a spin-polarized tunneling device based on half metallic manganites incorporating $Ba_{2}LaNbO_{6}$ as insulating barrier. An anomalous bias dependence of tunnel magnetoresistance (TMR) has been observed, the first of its…
The current-voltage characteristics of Au/InOx/Pb tunnel junctions exhibit peculiar zero-bias anomalies. At low temperature the zero-bias resistance attains values that are smaller than the normal state resistance by a factor that often…
We have studied the temperature dependence of resistivity, $\rho$, for a two-dimensional electron system in silicon at low electron densities, $n_s\sim10^{11}$ cm$^{-2}$, near the metal/insulator transition. The resistivity was empirically…
We consider the two-dimensional one-component plasma without a background and confined to a half plane near a metal wall. The particles are also subjected to an external potential acting perpendicular to the wall with an inverse power law…
The zero-bias tunneling resonance in quantum Hall bilayer systems is investigated via numerical simulations of the classical two dimensional XY model with a symmetry-breaking field. Disorder is included in the model, and is shown to…
We derive exact sum-rules that relate the tunneling density of states (TDOS) of spinful electrons in the fractional quantum Hall (FQH) regime to the spin-dependent many body ground state correlation energy. Because the tunneling process is…
We have calculated the tunneling density of states (DOS) at the location of a backward scattering defect for quantum wires and for edge state electrons in quantum Hall systems. A singular enhancement of the DOS arises as a result of the…
We study multilayer topological insulators with random interlayer tunneling, known as off-diagonal disorder. Within the Burkov-Balents model a single Hermitian defect creates a bound state whose energy crosses the middle of the gap in the…
Asymmetry of conduction of electrons in the spin majority and minority bands of a ferromagnetic metal is well known to produce spin accumulation at the boundary with a normal metal when a current is injected through the interface. However,…
We study the two-dimensional spatially separated electron-hole system with density imbalance at absolute zero temperature. By means of the mean-field theory, we find that the Fulde-Ferrell state is fairly stabilized by the order parameter…
We consider the tunneling Density of States (DoS) of superconducting films driven to the paramagnetic phase by the Zeeman splitting. We show that there is minimum in the DoS whose position depends on the orientation of the applied field.…
We study the effect of interlayer tunneling in the gauge theory describing a quasi-two-dimensional paramagnetic metal close to a second-order or weakly first-order antiferromagnetic phase boundary. In that theory, two species of fermions…
Understanding tunneling from an atomically sharp tip to a metallic surface requires to account for interactions on a nanoscopic scale. Inelastic tunneling of electrons generates emission of photons, whose energies intuitively should be…
We study the tunneling density of states (DoS) in the superconducting systems driven by Zeeman splitting E_Z into the paramagnetic phase. We show that, even though the BCS gap disappears, superconducting fluctuations cause a strong DoS…
We report on the tunneling density of states (DOS) in ultrathin and strongly disordered Be films quench-condensed at 20 K. Above 5 K, the DOS shows the well-known logarithmic anomaly at the Fermi level. Only in a narrow temperature range…
We report equilibrium electric resistance R and tunneling spectroscopy dI/dV measurements obtained on single multiwall nanotubes contacted by four metallic Au fingers from above. At low temperature quantum interference phenomena dominate…
Tunneling between two-dimensional electron layers with mutually correlated disorder potentials is studied theoretically. Due to this correlation, the diffusive eigenstates in different layers are almost orthogonal to each other. As a…
Motivated by recent experiments that report the almost-generic large-conductance peaks without very extensive fine-tuning, we propose an alternative mechanism through direct theoretical simulations that can explain the large zero-bias…
We use interlayer tunneling to study bilayer 2D electron systems at $\nu_T = 1$ over a wide range of charge density imbalance, $\Delta \nu =\nu_1-\nu_2$, between the two layers. We find that the strongly enhanced tunneling associated with…