Related papers: Zero-bias anomaly in two-dimensional electron laye…
Tunneling density of states of both the massless and massive (gapped) particles in metallic carbon nanotubes is known to have anomalous energy dependence. This is the result of coupling to multiple low-energy bosonic excitation (plasmons).…
We calculate the tunneling density of states (TDOS) in a three wire junction of interacting spin-1/2 electrons, and find an anomalous enhancement of the TDOS in the zero bias limit, even for repulsive interactions for several bosonic fixed…
We have studied tunneling of electrons into multi-wall carbon nanotubes. Nanotube/electrode interfaces with low transparency as well as nanotube/nanotube junctions created with atomic force microscope manipulation have been used. The…
Tunneling of electrons into a two-dimensional electron system is known to exhibit an anomaly at low bias, in which the tunneling conductance vanishes due to a many-body interaction effect. Recent experiments have measured this anomaly…
We determine the zero-bias anomaly of the conductance of tunnel junctions by an approach unifying the conventional Coulomb blockade theory for ultrasmall junctions with the diffusive anomalies in disordered conductors. Both,…
Tunneling spectroscopy measurements of single tunnel junctions formed between multiwalled carbon nanotubes (MWNTs) and a normal metal are reported. Intrinsic Coulomb interactions in the MWNTs give rise to a strong zero-bias suppression of a…
We consider a disordered two-dimensional electronic system in the limit of high magnetic field at the metal-insulator transition. Density of states close to the Fermi level acquires a divergent correction to the lowest order in…
We study the tunneling density of states (DOS) in an interacting disordered three-dimensional metal and calculate its energy dependence in the quasiballistic regime, for the deviation from the Fermi energy, $E-E_F$, exceeding the elastic…
We report an anomalous tunneling conductance with a zero bias peak in flakes of superconducting 2H-TaS$_2$ detached through mechanical exfoliation. To explain the observed phenomenon, we construct a minimal model for a single unit cell…
The precise positioning of dopants in semiconductors using scanning tunneling microscopes has led to the development of planar dopant-based devices, also known as $\delta$-layers, facilitating the exploration of new concepts in classical…
We study resonant tunneling through a quantum dot with one degenerate level in the presence of a strong Coulomb repulsion and a bosonic environment. Using a real-time approach we calculate the spectral density and the nonlinear current…
Motivated by the recently discovered time-reversal symmetry-breaking superconductivity in epitaxial Bi/Ni bilayer system with transition temperature $T_c\approx 4.2$K and the observation of zero-bias anomaly in tunneling measurements, we…
Electronic transport in multiwall carbon nanotubes and semiconductor nanowires was compared. In both cases, the non ohmic behavior of the conductance, the so-called zero bias anomaly, shows a temperature dependence that scales with the…
We study the intra-planar tunneling between quantum Hall samples separated by a quasi one-dimensional barrier, induced through the interaction of edge degrees of freedom with the charge density waves of a Hall crystal defined in a parallel…
Using the closed-time path integral approach, we nonperturbatively study inelastic tunneling of electrons via magnetic impurities in the barrier accompanied by phonon emission in a magnetic tunnel junction. The spectrum density of phonon…
We predict a new zero-bias anomaly in the differential conductance through a quantum dot coupled to two ferromagnetic leads with antiparallel magnetization. The anomaly differs in origin and properties from other anomalies in transport…
Individual metallic single-wall carbon nanotubes show unsual non-Ohmic transport behaviors at high bias fields. For low resistance contact samples, the differential conductance dI/dV increases with increasing bias, reaching a maximum at…
The combination of disorder and interactions is known in many systems to produce a feature in the single-particle density of states, the shape and parameter dependence of which act as signatures of the underlying electronic state. Strong…
We compare tunneling density of states (TDOS) into two ultrathin Ag films, one uniform and one granular, for different degrees of disorder. The uniform film shows a crossover from Altshuler-Aronov (AA) zero bias anomaly to Efros Shklovskii…
We provide conclusive experimental evidence that zero bias anomaly in the differential resistance of magnetic tunnel junctions (MTJs) is due to electron-electron interaction (EEI), clarifying a long standing issue. Magnon effect that caused…