Related papers: Image-potential band-gap narrowing at a metal/semi…
The development of integrated photonic circuits utilizing gallium phosphide requires a robust, scalable process for fabrication of GaP-on-insulator devices. Here we present the first GaP photonic devices on SiO$_2$. The process exploits…
We propose an experimental methodology for probing the energy barrier inhomogeneity at the metal/semiconductor interface without the need for time-consuming microscopic survey. It is based on the known statistical nature of the interfacial…
The paper introduces the idea of non-uniform quantization in the detail components of wavelet transformed image. It argues that most of the coefficients of horizontal, vertical and diagonal components lie near to zeros and the coefficients…
Light absorption at the boundary of indirect-band-gap and direct-forbidden gap semiconductors is analyzed. It is found that the possibility of the electron momentum nonconservation at the interface leads to essential enhancement of…
We present a first-principles study of the structural, electronic, and optical properties of hydrogenated amorphous silicon (a-Si:H). To this end, atomic configurations of a-Si:H with 72 and 576 atoms respectively are generated using…
GW approximation is one of the most popular parameter-free many-body methods that goes beyond the limitations of the standard density functional theory (DFT) to determine the excitation spectra for moderately correlated materials and in…
Efficient on-chip entangled photon pair generation at telecom wavelengths is an integral aspect of emerging quantum optical technologies, particularly for quantum communication and computing. However, moving to shorter wavelengths enables…
Recent expansions in multimedia devices gather enormous amounts of real-time images for processing and inference. The images are first compressed using compression schemes, like JPEG, to reduce storage costs and power for transmitting the…
Hydrogenation of amorphous silicon (a-Si:H) is critical for reducing defect densities, passivating mid-gap states and surfaces, and improving photoconductivity in silicon-based electro-optical devices. Modelling the atomic scale structure…
Phosphorene is a bidimensional material that has properties useful for semiconductor devices. In this work we studied the electronic and optical properties of this material using the $GW$ approximation and the Bethe-Salpeter equation (BSE)…
Decomposition of digital signals and images into other basis or dictionaries than time or space domains is a very common approach in signal and image processing and analysis. Such a decomposition is commonly obtained using fixed transforms…
We present the optical optimization of an optomechanical device based on a suspended InP membrane patterned with a 2D near-wavelength grating (NWG) based on a 2D photonic-crystal geometry. We first identify by numerical simulation a set of…
This paper presents a novel concept termed Integrated Imaging and Wireless Power Transfer (IWPT), wherein the integration of imaging and wireless power transfer functionalities is achieved on a unified hardware platform. IWPT leverages a…
Image width is important for image understanding. We propose a novel method to estimate widths for JPEG images when their widths are not available. The key idea is that the distance between two decoded MCUs (Minimum Coded Unit) adjacent in…
The reflectance of graphene is investigated in the framework of the Dirac model with account of its realistic properties, such as nonzero chemical potential and band gap, at any temperature. For this purpose, the exact reflection…
Original realization of a lens capable to transmit images with sub-wavelength resolution is proposed. The lens is formed by parallel conducting wires and effectively operates as a telegraph: it captures image at the front interface and the…
Layer-dependent electronic and structural properties of emerging graphitic carbon boron compound C3B are investigated using both density functional theory and the GW approximation. We discover that, in contrast to a moderate quasiparticle…
Despite its reasonable accuracy for ground-state properties of semiconductors and insulators, second-order Moller-Plesset perturbation theory (MP2) significantly underestimates band gaps. Here, we evaluate the band gap predictions of…
The $k \cdot p$ is a versatile technique that describes the semiconductor band structure in the vicinity of the bandgap. The technique can be extended to full Brillouin zone by including more coupled bands into consideration. For…
As a valid metric of metric-measure spaces, Gromov-Wasserstein (GW) distance has shown the potential for matching problems of structured data like point clouds and graphs. However, its application in practice is limited due to the high…