Related papers: Optoelectric spin injection in semiconductor heter…
The electron spin is emerging as a new powerful tool in the electronics and optics industries. Many proposed applications involve the creation of spin currents, which so far have proven to be difficult to produce in semiconductor…
The initialization of spin polarization in localized hole states is investigated using time-resolved Kerr rotation. We find that the sign of the polarization depends on the magnetic field, and the power and the wavelength of the circularly…
Electrical injection in organic semiconductors is a key prerequisite for the realization of organic spintronics. Using density-functional theory calculations we report the effect of electron transfer into the organic molecule Alq$_3$. Our…
We report on the spin-polarized electron injection through an Fe(100)/InAs(100) junction. The circularly polarized electroluminescence of injected electrons from epitaxially grown Fe thin film into InAs(100) in an external magnetic field is…
We present a theory of collective spin excitations in diluted-magnetic-semiconductor quantum wells in which local magnetic moments are coupled via a quasi-two-dimensional gas of electrons or holes. In the case of a ferromagnetic state with…
A theory of the circular photogalvanic effect caused by spin splitting in quantum wells is developed. Direct interband transitions between the hole and electron size-quantized subbands are considered. The photocurrent excitation spectrum is…
It is demonstrated theoretically that the circularly polarized irradiation of two-dimensional electron systems can induce the localized electron states which antiferromagnetically interact with conduction electrons, resulting in the Kondo…
We study the polarization optical properties of microcavities with embedded (110)-oriented quantum wells. The spin dynamics of exciton polaritons in such structures is governed by the interplay of the spin-orbit splitting of exciton states,…
We demonstrate electrical electron spin injection via interband tunneling in ferromagnetic/nonmagnetic semiconductor Esaki diodes. An interband tunnel junction between ferromagnetic p+-(Ga,Mn)As and nonmagnetic n+-GaAs under reverse-bias…
In this paper, current-induced spin polarization for two-dimensional electron gas with a general spin-orbit interaction is investigated. For isotropic energy spectrum, the in-plane current-induced spin polarization is found to be dependent…
We describe a new means for electrically creating spin polarization in semiconductors. In contrast to spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe spin accumulation at the…
Density-functional calculations using an exact exchange potential for a two-dimensional electron gas (2DEG) formed in a GaAs single quantum well predict the existence of a spin-polarized phase, when an excited subband becomes slightly…
We investigate electrically-induced spin currents generated by the spin Hall effect in GaAs structures that distinguish edge effects from spin transport. Using Kerr rotation microscopy to image the spin polarization, we demonstrate that the…
A quantum dot with spin-orbit interaction can work as an efficient spin filter if it is connected to N (> 2) external leads via tunnel barriers. When an unpolarized current is injected to a quantum dot from a lead, polarized currents are…
We have demonstrated by electroluminescence the injection of spin polarized electrons through Co/Al2O3/GaAs tunnel barrier into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the…
Electrons in double-layer semiconductor heterostructures experience a special type of spin-orbit interaction which arises in each layer from the perpendicular component of the Coulomb electric field created by electron density fluctuations…
We find a dramatic enhancement of electron propagation along a narrow range of real-space angles from an isotropic source in a two-dimensional quantum well made from a zincblende semiconductor. This ``electron beam'' formation is caused by…
We demonstrate spin polarized tunneling from Fe through a SiO2 tunnel barrier into a Si n-i-p heterostructure. Transport measurements indicate that single step tunneling is the dominant transport mechanism. The circular polarization, Pcirc,…
The paper reports optical orientation experiments performed in the narrow GaAs/AlGaAs quantum wells doped with Mn. We experimentally demonstrate a control over the spin polarization by means of the optical orientation via the…
We show that spin polarization of electrons in nonmagnetic semiconductors near specially tailored ferromagnet-semiconductor junctions can achieve 100%. This effect is realized even at moderate spin injection coefficients of the contact when…