Related papers: Solving rate equations for electron tunneling via …
We develope a model to describe the transmission coefficient and tunneling current in the presence of photon-electron coupling in a resonant diode. Our model takes into account multiphoton processes as well as the transitions between…
The study of charge and spin transport through semiconductor quantum dots is experiencing a renaissance due to recent advances in nano-fabrication and the realization of quantum dots as candidates for quantum computing. In this work, we…
The level splitting formulae much discussed in the study of spin tunneling in macroscopic ferromagnetic particles and previously derived only by complicated pseudoparticle methods for the ground state, are derived from those of eigenvalues…
We report measurements of the Kondo effect in a double quantum dot (DQD), where the orbital states act as pseudospin states whose degeneracy contributes to Kondo screening. Standard transport spectroscopy as a function of the bias voltage…
Resonant electron transport through a mesoscopic region (quantum dot or single molecule) with electron-phonon interaction is considered at finite voltage. In this case the standard Landauer-B\"uttiker approach cannot be applied. Using the…
This paper proposes a universal microscopic model for the shallow confinement regime of single-electron tunneling devices. We consider particle escape from a quantum well generically emerging as a bifurcation in a smooth electrostatic…
The quantum tunneling of the magnetization vector are studied theoretically in single-domain ferromagnetic nanoparticles placed in an external magnetic field at an arbitrarily directed angle in the $ZX$ plane. We consider the…
We employ ultrafast pump-probe spectroscopy to directly monitor electron tunneling between discrete orbital states in a pair of spatially separated quantum dots. Immediately after excitation, several peaks are observed in the pump-probe…
Using scanning tunneling spectroscopy in ultra-high vacuum at low temperature (T = 0.3 K) and high magnetic fields (B < 12 T), we directly probe electronic wave functions across an integer quantum Hall transition. In accordance with…
Electronic states in silicon quantum dots are examined theoretically, taking into account a multivalley structure of the conduction band. We find that (i) exchange interaction hardly works between electrons in different valleys. In…
Real-time probing of electrons can uncover intricate relaxation mechanisms and many-body interactions hidden in strongly correlated materials. While experimenters have used ultrafast optical pump-probe methods in bulk materials, laser…
Tunneling in quantum field theory is worth understanding properly, not least because it controls the long term fate of our universe. There are however, a number of features of tunneling rate calculations which lack a desirable transparency,…
Conventional quantum transport methods can provide quantitative information on spin, orbital, and valley states in quantum dots, but often lack spatial resolution. Scanning tunneling microscopy, on the other hand, provides exquisite spatial…
The tunneling conductance is calculated as a function of the gate voltage in wide temperature range for the single quantum dot systems with Coulomb interaction. We assume that two orbitals are active for the tunneling process. We show that…
Despite their ubiquity in nanoscale electronic devices, the physics of tunnel barriers has not been developed to the extent necessary for the engineering of devices in the few-electron regime. This problem is of urgent interest, as this is…
High energy resolution spectroscopic studies of quantum magnets have proven to be extremely valuable in directly accessing magnetodynamics quantities, such as energy barriers, magnetic interactions, lifetime of excited states and…
The results of tunnelling studies of the energy spectrum of two-dimensional (2D) states in a surface quantum well in a semiconductor with inverted band structure are presented. The energy dependence of quasimomentum of the 2D states over a…
We derive and evaluate expressions for the dc tunneling conductance between interacting two-dimensional electron systems at non-zero temperature. The possibility of using the dependence of the tunneling conductance on voltage and…
Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a…
We investigate a quantum phase transition (QPT) in quantum point contacts by analyzing the gate-voltage-dependent quasiparticle energy at the Fermi level at zero temperature. This energy is computed using the local density of states at the…