Related papers: Oscillating magnetoresistance in diluted magnetic …
Under microwave irradiation, in 2D electron systems with high filling factors oscillations of longitudinal magnetoresistance appear in the range of magnetic fields where ordinary SdH oscillations are suppressed. An unusual beat-like…
Anisotropic magnetoresistance (AMR) is a relativistic magnetotransport phenomenon arising from combined effects of spin-orbit coupling and broken symmetry of a ferromagnetically ordered state of the system. In this work we focus on one…
We report on electronic transport measurements of electrostatically gated nano-devices of the semimetal WTe\textsubscript{2}. High mobility metallic behavior is achieved in the 2D limit by encapsulating thin flakes in an inert atmosphere.…
We consider a microscopic theory for the spin Hall magnetoresistance (SMR). We generally formulate a spin conductance at an interface between a normal metal and a magnetic insulator in terms of spin susceptibilities. We reveal that SMR is…
The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias…
Material disorders are one of the major sources of noise and loss in solid-state quantum devices, whose behaviors are often modeled as two-level systems (TLSs) formed by charge tunneling between neighboring sites. However, the role of their…
In ferromagnetic nanostructures, the ballistic anisotropic magnetoresistance (BAMR) is a change in the ballistic conductance with the direction of magnetization due to spin-orbit interaction. Very recently, a directional dependent ballistic…
We demonstrate that the magnetization in magnetic semiconductors exhibits nutational motion when subjected to an external magnetic field. This behavior originates from the splitting of the conduction-electron band which induces anisotropic,…
The temperature dependence of 2D magnetoresistance in an applied in-plane magnetic field is theoretically considered for electrons in Si MOSFETs within the screening theory for long-range charged impurity scattering limited carrier…
The spin-polarized transport through a coherent strongly coupled double quantum dot (DQD) system is analyzed theoretically in the sequential and cotunneling regimes. Using the real-time diagrammatic technique, we analyze the current,…
The effects of the spin-orbit interaction on the tunneling magnetoresistance of magnetic tunnel junctions are investigated. A model in which the experimentally observed two-fold symmetry of the anisotropic tunneling magnetoresistance (TAMR)…
We investigate the spin-polarized transport properties of a two-dimensional electron gas in a n-type diluted magnetic narrow gap semiconductor quantum well subjected to a perpendicular magnetic and electric field. Interesting beating…
The bias dependence of the tunnel magnetoresistance (TMR) of Fe/MgO/Fe tunnel junctions is investigated theoretically with a fully self-consistent scheme that combines the non-equilibrium Green's functions method with density functional…
Spin-dependent transport phenomena due to relativistic spin-orbit coupling and broken space-inversion symmetry are often difficult to interpret microscopically, in particular when occurring at surfaces or interfaces. Here we present a…
Spin-dependent transport through a multilevel quantum dot weakly coupled to ferromagnetic leads is analyzed theoretically by means of the real-time diagrammatic technique. Both the sequential and cotunneling processes are taken into…
The magnetic behavior of insulating doped diluted magnetic semiconductors (DMS) is characterized by the interaction of large collective spins known as bound magnetic polarons. Experimental measurements of the susceptibility of these…
We propose a mechanism for the recently reported destabilization by an in-plane magnetic field of the conducting phase of low density electrons in 2D. We apply our self-consistent approach based on the memory function formalism to the fully…
Linear magnetoresistance occurs in semiconductors as a consequence of strong electrical disorder and is characterized by nonsaturating magnetoresistance that is proportional to the applied magnetic field. By investigating a disordered…
Spin-dependent transport through two coupled single-level quantum dots weakly connected to ferromagnetic leads with collinear magnetizations is considered theoretically. Transport characteristics, including the current, linear and nonlinear…
In III-V dilute magnetic semiconductors (DMSs) such as Ga$_{1-x}$Mn$_x$As, the impurity positions tend to be correlated, which can drastically affect the electronic transport properties of these materials. Within the memory function…