Related papers: Crystal Growth and Characterization of Doped CZT C…
Bridgman CdTe and CdZnTe crystal growth, with cadmium vapor pressure control, is applied to production of semiconductor gamma radiation detectors. Crystals are highly donor doped and highly electrically conducting. Annealing in tellurium…
Indium-doped semiconductor crystals CdZnTeSe with several different compositions of raw materials were grown via the vertical Bridgman method under high-pressure argon. For the first time, these crystals were obtained via a combined method…
Single crystals of Na$_{1-\delta}$Fe$_{1-x}$T$_x$As with T = Co, Rh have been grown using a self-flux technique. The crystals were thoroughly characterized by powder X-ray diffraction, magnetic susceptibility and electronic transport with…
Behaviour of a rare earth impurity of Eu in the PbTe single crystals grown by the Bridgman method from the melt with different initial concentrations of impurity N about 1*10+19 cm-3 and less is investigated with X-ray fluorescent element…
The development of laser materials with absorption/emission spectra in the atmospheric transparency band 2-5 microns is of great interest for modern applications. Triple-doped zinc selenide crystals activated with chromium, cobalt, and iron…
Cd-doped La(O,F)BiS2 single crystals were grown using a CsCl/KCl flux. The grown crystals have a plate-like shape with ~1-2 mm square size in a well-developed ab-plane. The Cd doping in the crystals was successfully characterized by single…
Bulk crystals of zinc oxide can be grown from the melt by a Bridgman technique under pressure. This new technology using an iridium crucible shows the potential to yield large single crystals of good crystalline perfection. Crystals with…
Superconducting single crystals of pure FeTe1 xSex and FeTe0.65Se0.35 doped with Co, Ni, Cu, Mn, Zn, Mo, Cd, In, Pb, Hg, V, Ga, Mg, Al, Ti, Cr, Sr or Nd into Fe ions site have been grown applying Bridgman's method. It has been found that…
The complexity and richness of phenomena governing alloy crystal growth can be unraveled by examining the three-dimensional atomic-level distribution of elements and impurities incorporated during growth. These species act as atomic…
High-purity germanium crystals approximately 12 cm in diameter were grown in a hydrogen atmosphere using the Czochralski method. The dislocation density of the crystals was determined to be in the range of 2000 - 4200 cm-2, which meets a…
Bulk single crystals of SrPt3P have been grown for the first time by a self-flux method at 2 GPa and 1500 {\deg}C using the cubic-anvil, high-pressure and high-temperature technique. The grown black crystals were found to have either a…
The preparation method of thermoelectric PbTe-CdTe semiconductor nanocomposite in the form of a bulk material doped with Bi, I or Na, intended for production the mid-temperature thermoelectric energy generators is presented. The method…
We grew (Hg,Re)Ba$_2$Ca$_2$Cu$_3$O$_{8+\delta}$ ((Hg,Re)1223) single crystals with good reproducibility via the single-step flux method using monoxides as raw materials. A double-sealing method using a thick-walled quartz tube and a…
By varying the parameters controlling the growth of crystals, including the thermodynamic variables, such as temperature, pressure, and reagent composition and the kinetic factors, namely reaction time and cooling rate, we found the most…
Germanium single crystal having 45 mm diameter and 100 mm length of 7N+ purity has been grown by Czochralski method. Structural quality of the crystal has been characterized by Laue diffraction. Electrical conduction and Hall measurements…
The role of Cr incorporation into the ZnO were probed through investigations into the structural, optical and magnetic properties. Zn1-xCrxO with x = 0, 0.01, 0.03 and 0.05, nanoparticles were prepared by solution combustion method. Powder…
The peculiar properties of zinc oxide (ZnO) make this material interesting for very different applications like light emitting diodes, lasers, and piezoelectric transducers. Most of these applications are based on epitaxial ZnO layers grown…
Large high-quality single crystals of hole-doped iron-based superconductor (Ba$_{1-x}$K$_x$)Fe$_2$As$_2$ were grown over a broad composition range $0.22 \leq x \leq 1$ by inverted temperature gradient method. We found that high soaking…
Single crystals of pure and Cd2+ doped potassium sulfate were grown from aqueous solutions by the slow evaporation technique. From nutrient solutions with a CdSO4 concentration of 4wt.% crystals containing 0.014wt.% dopant concentration…
The growth and characterization of CePtIn4, stabilized by 10% Zn substitution for In, is reported. The new material is orthorhombic, space group Cmcm (No. 63), with lattice parameters a = 4.51751(4) {\AA}, b = 16.7570(2) {\AA}, and c =…