Related papers: Spatial mapping of the electron eigenfunctions in …

The orbital, spin and valley degrees of freedom in silicon quantum dots support many modes of spin qubit operation. However, it is generally challenging to obtain information about the energy level spectrum over large ranges of parameter…

We study electronic configurations in a single pair of vertically coupled self-assembled InAs quantum dots, holding just a few electrons. By comparing the experimental data of non-linear single-electron transport spectra in a magnetic field…

We review a number of recent experiments which are probing ground state and excitations of few-electron systems in self-assembled InAs quantum dots. Far-infrared spectroscopy, together with local as well as large-scale capacitive probing…

We image the micro-electroluminescence (EL) spectra of self-assembled InAs quantum dots (QDs) embedded in the intrinsic region of a GaAs p-i-n diode and demonstrate optical detection of resonant carrier injection into a single QD. Resonant…

We report on high-resolution photoluminescence (PL) spectroscopic and microscopic study of laterally coupled InAs/GaAs self-assembled quantum dots by using a low-temperature near-field scanning optical microscope. We have observed slightly…

A one-parameter random matrix model is proposed for describing the statistics of the local amplitudes and phases of electron eigenfunctions in a mesoscopic quantum dot in an arbitrary magnetic field. Comparison of the statistics obtained…

We show that in-plane-magnetic-field assisted spectroscopy allows extraction of the in-plane orientation and full 3D shape of the quantum mechanical orbitals of a single electron GaAs lateral quantum dot with sub-nm precision. The method is…

Most self-assembled quantum dot molecules are intrinsically asymmetric with inequivalent dots resulting from imperfect control of crystal growth. We have grown vertically-aligned pairs of InAs/GaAs quantum dots by molecular beam epitaxy,…

We have applied a scanning probe method, Subsurface Charge Accumulation (SCA) imaging, to resolve the local structure of the interior of a semiconductor two-dimensional electron system (2DES) in a tunneling geometry. Near magnetic fields…

We discuss the formation of crystalline electron clusters in semiconductor quantum dots and of crystalline patterns of neutral bosons in harmonic traps. In a first example, we use calculations for two electrons in an elliptic quantum dot to…

Quantum dots are small conductive regions in a semiconductor, containing a variable number of electrons (N=1 to 1000) that occupy well defined discrete quantum states. They are often referred to as artificial atoms with the unique property…

Electron transport experiments on two lateral quantum dots coupled in series are reviewed. An introduction to the charge stability diagram is given in terms of the electrochemical potentials of both dots. Resonant tunneling experiments show…

The degree of entanglement of an electron with a hole in a vertically coupled self-assembled dot molecule is shown to be tunable by an external electric field. Using atomistic pseudopotential calculations followed by a configuration…

We propose a novel probe technique capable of performing local low-temperature spectroscopy on a 2D electron system (2DES) in a semiconductor heterostructure. Motivated by predicted spatially-structured electron phases, the probe uses a…

Molecular states in a SINGLE PAIR of strongly coupled self-assembled InAs quantum dots are investigated using a sub-micron sized single electron transistor containing just a few pairs of coupled InAs dots embedded in a GaAs matrix. We…

We report the direct observation of coupling between a single self-assembled InAs quantum dot and a wetting layer, based on strong diamagnetic shifts of many-body exciton states using magneto-photoluminescence spectroscopy. An extremely…

While the dynamics for three-dimensional axially symmetric two-electron quantum dots with parabolic confinement potentials is in general non-separable we have found an exact separability with three quantum numbers for specific values of the…

We report on a atomistic theory of electronic structure and optical properties of a single InAs quantum dot grown on InP patterned substrate. The spatial positioning of individual dots using InP nano-templates results in a quantum dot…

We report on non-linear magneto-tunneling experiments carried out in single GaAs vertical quantum dots. We show that conduction at low voltage bias can be a spectroscopic tool for both the ground state and first excited states of few…

We study the spin filling of a semiconductor quantum dot using excited-state spectroscopy in a strong magnetic field. The field is oriented in the plane of the two-dimensional electron gas in which the dot is electrostatically defined. By…