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Silicon nanocrystals are produced using a two-stage gold ion implantation technique. First stage implantation using low energy ions leads to the formation of an amorphous Si (a-Si) layer. A subsequent high energy Au irradiation in the…

Mesoscale and Nanoscale Physics · Physics 2014-03-26 Gayatri Sahu , Rajesh Kumar , D. P. Mahapatra

Controlled formation of porous silicon has been of primary importance for numerous landmark applications such as light emitting sources, sensors, actuators, drug delivery systems, and energy storage applications. Frequently explored methods…

This study provides a new insight into the processes which occur when thin film hydrogenated amorphous silicon is subjected to UV laser irradiation in the presence of oxygen. It achieves this by observing the effects of subjecting the films…

Materials Science · Physics 2016-06-02 Saydulla K. Persheyev , James A. Cairns

The nucleation and structure of silicon nanocrystals formed by different preparation conditions and silicon concentration (28 - 70 area %) have been studied using Transmission Electron Microscopy (TEM), Energy Filtered TEM (EFTEM) and…

Systematic studies of the gradual fabrication by means of carbon ion-implantation of high-quality 6H-SiC layers on silicon surfaces have been carried out. The fluence of carbon ions varied from 5*10^15 cm-2 to 10^17 cm-2. Results of…

We report on a nanoscale patterning method on Si substrates using self-assembled metal islands and low-energy ion-beam irradiation. The Si nanostructures produced on the Si substrate have a one-to-one correspondence with the self-assembled…

Materials Science · Physics 2009-11-10 B. Satpati , B. N. Dev

The synthesis of embedded silicon carbide was carried out in N type silicon samples having (100) and (111) orientations using high dose implantation of carbon ions at room temperature. The variation of dose was employed to get dose…

Materials Science · Physics 2007-05-23 Y. S. Katharria , V. BAranwal , D. C. Agarwal , R. Krishna , P. Kumar , F. Singh , D. Kanjilal

Single-crystal nanoparticles of silicon, several tens of nm in diameter, may be suitable as building blocks for single-nanoparticle electronic devices. Previous studies of nanoparticles produced in low-pressure plasmas have demonstrated the…

We report formation of self organized InP nano dots using 3 keV Ar+ ion sputtering, at $15^\circ$ incidence from surface normal, on InP(111) surface. Morphology and optical properties of the sputtered surface, as a function of sputtering…

Materials Science · Physics 2007-08-22 D. Paramanik , S. Majumdar , S. R. Sahoo , S. N. Sahu , S. Varma

Nickel monosilicide (NiSi) has emerged as an excellent material of choice for source-drain contact applications below 45 nm node complementary metal-oxide-semiconductor (CMOS) technology. We have investigated the formation of nanoscale NiSi…

Materials Science · Physics 2017-03-08 Nasrin Banu , Biswarup Satpati , Anjan Bhukta , B. N. Dev

The nanostructure of hydrogenated amorphous silicon (a Si:H) is studied by a combination of small-angle X-ray (SAXS) and neutron scattering (SANS) with a spatial resolution of 0.8 nm. The a-Si:H materials were deposited using a range of…

Materials Science · Physics 2020-11-04 Eike Gericke , Jimmy Melskens , Robert Wendt , Markus Wollgarten , Armin Hoell , Klaus Lips

We report experiments on surface nanopatterning of Si targets which are irradiated with 2 keV Ar + ions impinging at near-glancing incidence, under concurrent co-deposition of Au impurities simultaneously extracted from a gold target by the…

Mesoscale and Nanoscale Physics · Physics 2016-03-30 B. Moon , S. Yoo , J. -S. Kim , S. J. Kang , J. Muñoz-García , R. Cuerno

Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si_{1-x-y}Sn_{x}C_{y}, where x = 1.6 % and y = 0.04 %, followed by annealing at various temperatures ranging from 650 to 900 degrees C.…

Amorphous silicon films prepared by electron beam evaporation have systematically and substantially greater atomic density for higher thickness, higher growth temperature, and slower deposition rate, reaching the density of crystalline Si…

Materials Science · Physics 2022-04-27 H. C. Jacks , M. Molina-Ruiz , M. H. Weber , J. J. Maldonis , P. M. Voyles , T. H. Metcalf , X. Liu , F. Hellman

Highly ordered one-dimensional arrays of nanodots, or nanobeads, are fabricated by forming nanoripples and nanodots in sequence, entirely by ion-beamsputtering (IBS) of Au(001). This demonstrates the capability of IBS for the fabrication of…

Mesoscale and Nanoscale Physics · Physics 2015-05-27 J-H Kim , N-B Ha , J-S Kim , M Joe , K-R Lee , R. Cuerno

Amorphous hydrogenated silicon nitride ($\textit{a}$-SiN$_\mathrm{\textit{x}}$:H) thin films irradiated with 100 MeV Ni$^{7+}$ results in the formation of continuous ion track structures at the lower fluence of $5\times{10^{12}}$…

Applied Physics · Physics 2020-08-18 R K Bommali , S Ghosh , Harsh Gupta , Rafael Pérez Casero , P Srivastava

The production of nanopatterns on the surfaces of targets irradiated by ion beams at low and intermediate energies has developed during the present decade to a salient degree of control over the main pattern features. However, there is…

The concept of high refractive index subwavelength dielectric nanoresonators, supporting electric and magnetic optical resonances, is a promising platform for waveguiding, sensing, and nonlinear nanophotonic devices. However, high…

The study of hexagonal silicon polytypes attracts special attention due to their unique physical properties compared to the traditional cubic phase of Si. Thus, for some hexagonal phases, a significant improvement in the emission properties…

In the challenging search for tools that are able to modify surfaces on the nanometer scale, heavy ions with energies of several 10 MeV are becoming more and more attractive. In contrast to slow ions where nuclear stopping is important and…

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