Related papers: Efficient Switching and Domain Interlocking Observ…
Ferroelectric domain walls are attracting broad attention as atomic-scale switches, diodes and mobile wires for next-generation nanoelectronics. Charged domain walls in improper ferroelectrics are particularly interesting as they offer…
Fluorite ferroelectrics are exciting candidates for next-generation non-volatile memory devices because their unique ferroelectric mechanism, which arises from unconventional oxygen displacements, permits ferroelectricity with minimal…
Efficient electrical manipulation of domain walls is key to developing magnetic devices with fast switching capabilities and low energy consumption. Here we demonstrate Bloch-type domain wall velocities exceeding 1 km s$^{-1}$ in the…
The effect of magnetic domain boundaries displacement induced by electric field is observed in epitaxial ferrite garnet films (on substrates with the (210) crystallographic orientation). The effect is odd with respect to the electric field…
The control of magnetic domain walls is essential for the magnetic-based memory and logic applications. As an elementary excitation of magnetic order, spin wave is capable of moving magnetic domain walls just as the conducting electric…
Domains walls and topological defects in ferroelectric materials have emerged as a powerful new paradigm for functional electronic devices including memory and logic. Similarly, wall interactions and dynamics underpin a broad range of…
Initial conditions after quenching from a high-temperature paraelectric phase to a low-temperature ferroelectric phase have a substantial impact on the temporal development and formation of stable polarization domain structures which…
We study the effect of depolarization field related with inhomogeneous polarization distribution, strain and surface energy parameters on a domain wall profile near the surface of a ferroelectric film within the framework of…
The intended use of a magnetic material, from information storage to power conversion, depends crucially on its domain structure, traditionally crafted during materials synthesis. By contrast, we show that an external magnetic field applied…
The current-driven domain wall motion along two exchange-coupled ferromagnetic layers with perpendicular anisotropy is studied by means of micromagnetic simulations and compared to the conventional case of a single ferromagnetic layer. Our…
A promising mechanism for achieving colossal dielectric constants is to use insulating internal barrier layers, which typically form during synthesis and then remain in the material. It has recently been shown that insulating domain walls…
Wurtzite ferroelectrics possess transformative potential for next-generation microelectronics. A comprehensive understanding of their ferroelectric properties and domain energetics is crucial for tailoring their ferroelectric…
The switching behavior of antiferroelectric domain structures under the applied electric field is not fully understood. In this work, by using the phase field simulation, we have studied the polarization switching property of…
The recently proposed dynamical multiferroic effect describes the generation of magnetization from temporally varying electric polarization. Here, we show that the effect can lead to a magnetic field at moving ferroelectric domain walls,…
Theoretically, we study the dynamics of a current induced domain wall in the bi-layer structure consists of a ferromagnetic layer and a non-magnetic metal layer with strong spin-orbit coupling in the presence of spin-Hall effect. The…
Ferroelectric domain walls are nanoscale objects that can be created, positioned, and erased on demand. They often embody functional properties that are distinct from the surrounding bulk material. Enhanced conductivity, for instance, is…
Ferroelectric domain variants that are energetically equivalent are expected to remain preserved during polarization reversal under a symmetry-preserving electric field. However, recent experiments on relaxor-ferroelectric crystals have…
The electric field effect on magnetism was examined in the multiferroic conical magnet Mn$_2$GeO$_4$, which shows a strong coupling between ferromagnetic and ferroelectric order parameters. The systematic evaluation of the electric…
Control of magnetic domain wall motion by electric fields has recently attracted scientific attention because of its potential for magnetic logic and memory devices. Here, we report on a new driving mechanism that allows for magnetic domain…
Ferroelectric domain walls represent multifunctional 2D-elements with great potential for novel device paradigms at the nanoscale. Improper ferroelectrics display particularly promising types of domain walls, which, due to their unique…