Related papers: Efficient Switching and Domain Interlocking Observ…
We investigated domain kinetics by measuring the polarization switching behaviors of polycrystalline Pb(Zr,Ti)O$_{3}$ films, which are widely used in ferroelectric memory devices. Their switching behaviors at various electric fields and…
We study ferroelectric domain walls in barium titanate. We search for structurally nontrivial, so-called non-Ising domain walls, where the Polarisation is non-zero along the entire wall. Our approach enables us to find solutions for domain…
Ferroelectric polarization switching underpins the functional performance of a wide range of materials and devices, yet its dependence on complex local microstructural features renders systematic exploration by manual or grid-based…
The dynamics of a multiferroic domain wall in which an electric field can couple to the magnetization via inhomogeneous magnetoelectric interaction is investigated by the collective-coordinate framework. We show how the electric field is…
Ultrafast switching of ferroic phases is an important research frontier, with significant technological potential. Yet, current efforts are meeting some key challenges, ranging from limited speeds in ferromagnets to intrinsic volatility of…
Simultaneous imaging of the piezoresponse phase, amplitude and bare surface topography of displacive ferroelectric thin films by scanning probe microscopy directly shows the nature of domain wall pinning and its relation to morphological…
Surprisingly little is known about the microscopic processes that govern ferroelectric switching in orthorhombic ferroelectrics. To study microscopic switching processes we combine ab initio-based molecular dynamics simulations and data…
In elastically coupled multiferroic heterostructures that exhibit full domain correlations between ferroelectric and ferromagnetic sub-systems, magnetic domain walls are firmly pinned on top of ferroelectric domain boundaries. In this work…
The switching dynamics of ferroelectric materials is a crucial intrinsic property which directly affects the operation and performance of ferroelectric devices. In conventional ferroelectric materials, the typical ferroelectric switching…
We show that nano-scale variations of the order parameter in strongly-correlated systems can induce local spatial regions such as domain walls that exhibit electronic properties representative of a different, but nearby, part of the phase…
Charge-neutral 180$^\circ$ domain walls that separate domains of antiparallel polarization directions are common structural topological defects in ferroelectrics. In normal ferroelectrics, charged 180$^\circ$ domain walls running…
While scandium-doped aluminum nitride (AlScN) exhibits robust ferroelectricity and excellent thermal stability, its utility is limited by an exceptionally high coercive field ($E_c$) for polarization switching. Unraveling the atomistic…
Field-induced domain wall dynamics in ferroelectric materials underpins multiple applications ranging from actuators to information technology devices and necessitates a quantitative description of the associated mechanisms including giant…
Sliding ferroelectricity is highly attractive for its low energy barriers and fatigue resistance. As the origin of these exotic properties, its unconventional switching dynamics remains poorly understood: how an electric field drives a…
We simulate field-induced nucleation and switching of domains in a three-dimensional model of ferroelectrics with quenched disorder and varying domain sizes. We study (1) bursts of the switching current at slow driving along the hysteresis…
With the recent experimental verification that ferroelectric lattice distortions survive in the metallic phase of some materials, there is a desire to create devices that are both switchable and take advantage of the novel functionalities…
Using a Ginzburg--Landau--Devonshire model that includes the coupling of polarization to strain, we calculate the fluctuation spectra of ferroelectric domain walls. The influence of the strain coupling differs between 180 degree and 90…
It is well known that stacking domains form in moir\'e superlattices due to the competition between the interlayer van der Waals forces and intralayer elastic forces, which can be recognized as polar domains due to the local spontaneous…
Materials with long-range order like ferromagnetism or ferroelectricity exhibit uniform, yet differently oriented three-dimensional regions called domains that are separated by two-dimensional topological defects termed domain…
Semiconducting ferroelectric materials with low energy polarisation switching offer a platform for next-generation electronics such as ferroelectric field-effect transistors. Ferroelectric domains at symmetry-broken interfaces of transition…