Related papers: Kondo Effects in Quantum Dots at Large Bias
We consider electronic transport through break-junctions bridged by a single molecule in the Kondo regime. We describe the system by a two-channel Anderson model. We take the tunneling matrix elements to depend on the position of the…
We consider electron transport through a quantum dot described by the Kondo model in the regime of large transport voltage V in the presence of a magnetic field B with max(V,B) >> T_K. The electric current I and the local magnetization M…
We develop a general method to evaluate the Kondo temperature in a multilevel quantum dot that is weakly coupled to conducting leads. Our theory reveals that the Kondo temperature is strongly enhanced when the intradot energy-level spacing…
Molecular electronics offers unique scientific and technological possibilities, resulting from both the nanometre scale of the devices and their reproducible chemical complexity. Two fundamental yet different effects, with no classical…
We present a general description of low temperature transport through a quantum dot with any number of electrons at filling factor $1<\nu <2$. We provide a general description of a novel Kondo effect which is turned on by application of an…
We investigate the properties of the molecular quantum dot (Holstein-Anderson) model using numerical and analytical techniques. Path integral Monte Carlo simulations for the cumulants of the distribution function of the phonon coordinate…
We consider a quantum dot coupled to two BCS superconductors with same gap energies $\Delta$. The transport properties are investigated by means of infinite-$U$ noncrossing approximation. In equilibrium density of states, Kondo effect shows…
Electron tunneling through a system formed by two coupled quantum dots in a parallel geometry is considered within a generalized Anderson model. The dots are assumed to have nearly equal radii but different (and tunable) gate voltages. In…
The breakdown of the Kondo effect may be the origin of the anomalous properties of the heavy-fermion compounds at low temperatures. We study the dynamics of one impurity embedded in an antiferromagnetic host at the quantum critical point…
We investigate the Kondo effect in a quadruple quantum dot device of coupled-double quantum dots (DQDs), which simultaneously contains intra-DQDs and inter-DQDs coupling. A variety of novel behaviors are observed. The differential…
The tip of a low-temperature scanning tunneling microscope is brought into contact with individual Kondo impurities (cobalt atoms) adsorbed on a Cu(100) surface. A smooth transition from the tunneling regime to a point contact with a…
We investigate the effects of voltage induced spin-relaxation in a quantum dot in the Kondo regime. Using nonequilibrium perturbation theory, we determine the joint effect of self-energy and vertex corrections to the conduction electron…
We analyze the nonequilibrium Kondo model at finite voltage and temperature by using a new formulation of the real-time renormalization group method with the Laplace variable as the flow parameter. We evaluate the energy-dependent spin…
We report on a novel Kondo phenomenon of interacting quantum dots coupled asymmetrically to a normal and a superconducting lead. The effects of intradot Coulomb interaction and Andreev tunneling give rise to Andreev bound resonances. As a…
We investigate the dynamics of a strongly correlated quantum dot system in the mixed valence regime based on the hierarchical equations of motion (HEOM) approach. The transient and steady state transport properties after a quantum quench…
Impurity four- and six-level Kondo model, in which an ion is tunneling among four- and six-stable points and interacting with surrounding conduction electrons, are investigated by using the perturbative and numerical renormalization group…
The Kondo effect is the many-body screening of a local spin by a cloud of electrons at very low temperature. It has been proposed as an explanation of the zero-bias anomaly in quantum point contacts where interactions drive a spontaneous…
An artificial atom with four electrons is driven through a singlet-triplet transition by varying the confining potential. In the triplet, a Kondo peak with a narrow dip at drain-source voltage V_ds=0 is observed. The low energy scale V_ds*…
Weak spin-orbit coupling produces very limited current induced spin accumulation in semiconductor nanostructures. We demonstrate a possibility to increase parametrically the spin polarization using the Kondo effect. As a model object we…
We study the transport behavior induced by a small bias voltage through a quantum dot connected to one-channel finite-size wires. We describe the quantum dot by the Hubbard-Kondo which is solved by means of a quantum Monte Carlo method. We…