Related papers: Electrostatic force spectroscopy of a single InAs …
Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable to probe these devices and the quantum states they host at…
Nanowire heterostructures define high-quality few-electron quantum dots for nanoelectronics, spintronics and quantum information processing. We use a cooled scanning probe microscope (SPM) to image and control an InAs quantum dot in an…
We propose a quantum transport experiment to prepare and measure charge-entanglement between two electrostatically defined quantum dots. Coherent population trapping, as realized in cavity quantum electrodynamics, can be carried out by…
Quasi-static transport measurements are employed to characterize a few electron quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure. The gate geometry allows observations on one and the same electron droplet within a wide…
The separation of physical forces acting on the tip of a magnetic force microscope (MFM) is essential for correct magnetic imaging. Electrostatic forces can be modulated by varying the tip-sample potential and minimized to map the local…
Amplitude-modulation atomic force microscopy (AM-AFM) measures nanoscale surface structures by detecting changes in the cantilever oscillation amplitude, contributing to materials research. AM-AFM can non-destructively observe fragile…
Excitonic spectra are calculated for free-standing, surface passivated InAs quantum dots using atomic pseudopotentials for the single-particle states and screened Coulomb interactions for the two-body terms. We present an analysis of the…
We performed measurements at helium temperatures of the electronic transport in an InAs quantum wire ($R_{wire} \sim 30$\,k$\Omega$) in the presence of a charged tip of an atomic force microscope serving as a mobile gate. The period and the…
We study the electronic structure of a single self-assembled InAs quantum dot by probing elastic single-electron tunneling through a single pair of weakly coupled dots. In the region below pinch-off voltage, the non-linear threshold voltage…
We study theoretically the interaction between the charge dynamics of a few-electron double quantum dot and a capacitively-coupled AFM cantilever, a setup realized in several recent experiments. We demonstrate that the dot-induced frequency…
A gate-defined quantum dot in an InAs nanowire is fabricated on top of a quantum point contact realized in a two-dimensional electron gas. The strong coupling between these two quantum devices is used to perform time-averaged as well as…
Multi-million atom simulations are performed to study stacking-angle ($\theta$) dependent strain profiles, electronic structure, and polarization-resolved optical modes from [110]-tilted quantum dot stacks (QDSs). Our calculations reveal…
The disordered potential landscape in an InGaAs/InAlAs two-dimensional electron gas patterned into narrow wires is investigated by means of scanning gate microscopy. It is found that scanning a negatively charged tip above particular sites…
An analytical model of the electrostatic force between the tip of a non-contact Atomic Force Microscope (nc-AFM) and the (001) surface of an ionic crystal is reported. The model is able to account for the atomic contrast of the local…
A scanning force microscope with a base temperature below 300 mK is used for measuring the local electron density of a two-dimensional electron gas embedded in an Ga[Al]As heterostructure. At different separations between AFM tip and…
The influence of the tip-substrate bias induced electric field in a scanning-tunneling-spectroscopy experiment on charged InAs nanocrystals is studied. Calculating the ground and first excited many-particle state for five electrons…
Quantum dots are recognized as a suitable platform for studying thermodynamic phenomena involving single electronic charges and spins in nano-scale devices. However, such a thermodynamic system is usually driven by electron reservoirs at…
We present a self-consistent Schroedinger-Poisson scheme for simulation of electrostatic quantum dots defined in gated two-dimensional electron gas formed at n-AlGaAs/GaAs heterojunction. The computational method is applied to a…
We measure the quantum capacitance and probe thus directly the electronic density of states of the high mobility, Dirac type of two-dimensional electron system, which forms on the surface of strained HgTe. Here we show that observed…
We propose a two-frequency driving scheme in dynamic atomic force microscopy that maximizes the interaction time between tip and sample. Using a stochastic description of the cantilever dynamics, we predict large classical squeezing and a…