Related papers: Tight-binding study of interface states in semicon…
We have investigated ab initio the existence of localized states and resonances in abrupt GaAs/Si/GaAs (110)- and (100)-oriented heterostructures incorporating 1 or 2 monolayers (MLs) of Si, as well as in the fully developed Si/GaAs (110)…
In flat-band systems, destructive interference leads to the localization of non-interacting particles and forbids their motion through the lattice. However, in the presence of interactions the overlap between neighbouring single-particle…
Here, we investigate the fractal-lattice Hubbard model using various numerical methods: exact diagonalization, the self-consistent diagonalization of a (mean-field) Hartree-Fock Hamiltonian and state-of-the-art Auxiliary-Field Quantum Monte…
Rapid design and development of the emergent ultra-wide bandgap semiconductors Ga$_2$O$_3$ and Al$_2$O$_3$ requires a compact model of their electronic structures, accurate over the broad energy range accessed in future high-field,…
Empirical tight binding(ETB) methods are widely used in atomistic device simulations. Traditional ways of generating the ETB parameters rely on direct fitting to bulk experiments or theoretical electronic bands. However, ETB calculations…
We study the mean-field broken symmetry phases of charge neutral multilayer rhombohedral graphene within tight-binding approximations including self-consistent extended Hubbard interactions. We used on-site and inter-site Hubbard…
We present studies of an effective model which is a simple generalization of the standard model of a local pair superconductor with on-site pairing (i.e., the model of hard core bosons on a lattice) to the case of finite pair binding…
The topological properties of the one-dimensional interacting systems with spatially modulated interaction in two-particle regime are theoretically investigated. Taking the boson-Hubbard model and spinless fermion interacting model as…
We describe a versatile mechanism that provides tight-binding models with an enriched, topologically nontrivial bandstructure. The mechanism is algebraic in nature, and leads to tight-binding models that can be interpreted as a non-trivial…
The high-order harmonic generation in finite topological nanoribbons is investigated using a tight-binding description. The ribbons consist of hexagons and are almost one-dimensional. Two edge states emerge at the short edges of the ribbon…
We study the one-dimensional Bose-Hubbard model under the resonant condition, where a series of quantum slinky oscillations occur in a two-site system for boson numbers $n\in \lbrack 2,\infty )$. In the strong interaction limit, it can be…
Two-dimensional topological insulators possess conducting edge states at their boundary while being insulating in the bulk. The detection of edge states remains an open question in ultracold atom setups. We propose a configuration to…
We consider the heteroclinic connection problem for a class of Hamiltonian systems, containing a large competition parameter, which arise in the study of the behaviour of the wave functions of a two-component Bose-Einstein condensate near…
Bismuth oxyselenide (Bi$_2$O$_2$Se), a novel quasi-2D charge-carrying semiconductor, is hailed as one of the best emerging platforms for the next generation semiconductor devices. Recent efforts on developing diverse Bi$_2$O$_2$Se…
We develop a theory of edge states based on the Hermiticity of Hamiltonian operators for tight-binding models defined on lattices with boundaries. We describe Hamiltonians using shift operators which serve as differential operators in…
We have studied a simple effective model of charge ordered insulators. The tight binding Hamiltonian consists of the effective on-site interaction U and the intersite density-density interaction Wij (both: nearest-neighbor and…
We derive symmetry-based conditions for tight-binding Hamiltonians with flatbands to have compact localized eigenstates occupying a single unit cell. The conditions are based on unitary operators commuting with the Hamiltonian and…
We derive an {\em ab initio} $\pi$-band tight-binding model for $AB$ stacked bilayer graphene based on maximally localized Wannier wave functions (MLWFs) centered on the carbon sites, finding that both intralayer and interlayer hopping is…
In this paper, the electronic properties of 30{\deg} twisted double bilayer graphene, which loses the translational symmetry due to the incommensurate twist angle, are studied by means of the tight-binding approximation. We demonstrate the…
We propose a new class of tight-binding models where a flat band is either gapped from or crossing right through a dispersive band on two-band (i.e., two sites/unit cell) tetragonal and honeycomb lattices. By imposing a condition on the…