Related papers: Electron localization in the insulating state: app…
Using a finite-size scaling method, we calculate the localization properties of a disordered two-dimensional electron system in the presence of a random magnetic field. Below a critical energy $E_c$ all states are localized and the…
(Electric) polarization tensors describe part of the leading order term of asymptotic voltage perturbations caused by low volume fraction inhomogeneities of the electrical properties of a medium. They depend on the geometry of the support…
We propose a characterization tool for studies of the band structure of new materials promising for the observation of topological phase transitions. We show that a specific resonant feature in the entropy per electron dependence on the…
We provide a fairly complete discussion of electronic properties of nanochains modelling the simplest quantum nanowires, within the recently proposed approach combining Exact Diagonalization in the Fock space with an Ab Initio calculations…
In this paper, we study the localization phenomena in a slender cylinder composed of an incompressible hyperelastic material subjected to axial tension. We aim to construct the analytical solutions based on a three-dimensional setting and…
approaches. We demonstrate that the Wigner regime can be reached using small values of the confinement parameter. To obtain physical insight in our results we analyze them with a semi-analytical model for two electrons. Thanks to…
The rapid progress of electron spin resonance scanning tunneling microscopy experiments has enabled the manipulation of individual adsorbate spin states physisorbed on ultrathin oxide layers supported on metal substrates. Electron resonance…
In this work we present a systematic study of three representative iridium dyes, namely, Ir(ppy)3, FIrpic and PQIr, which are commonly used as sensitizers in organic optoelectronic devices. We show that electronic correlations play a…
In numerical simulations, spontaneously broken symmetry is often detected by computing two-point correlation functions of the appropriate local order parameter. This approach, however, computes the square of the local order parameter, and…
We elucidate the different mechanisms of wave localisation in disordered finite systems of subwavelength resonators, where the disorder is in the spatial arrangement of the resonators. To do so, we employ the capacitance matrix formalism…
In standard optical tomographic methods, the off-diagonal elements of a density matrix $\rho$ are measured indirectly. Thus, the reconstruction of $\rho$, even if it is based on linear inversion, typically magnifies small errors in the…
The localization of electrons in the field of isolated nonmagnetic impurity atoms on the surface of a nanotube in a magnetic field is considered. A model of a Gaussian separable impurity potential capable of localizing an electron at any…
The objective of electrical impedance tomography is to reconstruct the internal conductivity of a physical body based on measurements of current and potential at a finite number of electrodes attached to its boundary. Although the…
Dyson insulators with random hoppings in a lattice approach localization faster compared to the usual Anderson insulators with site disorder. For even-$N$ lattice sites the Dyson insulators mimic topological insulators with a pseudo-gap at…
Charge carriers in organic semiconductors form polarons, which are self-localized states stabilized by interactions with their environment. Using a dielectric-stabilized tight-binding model parameterized from first-principles calculations,…
This paper concerns the numerical approximation of low-energy eigenstates of the linear random Schr\"odinger operator. Under oscillatory high-amplitude potentials with a sufficient degree of disorder it is known that these eigenstates…
In semiconductor nanostructures, optical excitation typically creates bound electron-hole states, such as excitons, trions, and larger complexes. Their relative motion is described by the Wannier equation, which is valid only for spatially…
Three-dimensional random electron systems undergo quantum phase transitions and show rich phase diagrams. Examples of the phases are the band gap insulator, Anderson insulator, strong and weak topological insulators, Weyl semimetal, and…
Hexagonal boron nitride (hBN) is a large band gap layered crystal, frequently incorporated in van der Waals (vdW) heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible…
As the variation of temperature alters the intrinsic carrier density in a semiconductor, numerical simulations indicate that the consequent variation of the relative permittivity in the terahertz regime provides a way to realize thermally…