Related papers: Level Correlations for Metal-Insulator Transition
We examine the onset of Anderson localization in three-dimensional systems with structural disorder in the form of lattice irregularities and in the absence of any on-site disordered potential. Analyzing two models with distinct types of…
The phase diagram of correlated, disordered electron systems is calculated within dynamical mean-field theory using the H\"older mean local density of states. A critical disorder strength is determined in the Anderson-Falicov-Kimball model…
We study the Anderson-type localisation-delocalisation transition found previously in the QCD Dirac spectrum at high temperature. Using high statistics QCD simulations with $N_f=2+1$ flavours of staggered quarks, we discuss how the change…
Topology and disorder have deep connections and a rich combined influence on quantum transport. In order to probe these connections, we synthesized one-dimensional chiral symmetric wires with controllable disorder via spectroscopic…
We investigate the charging energy level statistics of disordered interacting electrons in quantum dots by numerical calculations using the Hartree approximation. The aim is to obtain a global picture of the statistics as a function of…
We investigate the ground-state phase diagram of the spinless Haldane-Hubbard model in the presence of quenched disorder, contrasting results obtained from both exact diagonalization as well as density matrix renormalization group, applied…
The transition from arbitrary to chaotic fluctuation properties in quantum systems is studied in a random matrix model. It is assumed that the Hamiltonian can be written as the sum of an arbitrary and a chaos producing part. The Gaussian…
The statistics of gaps between quantum energy levels is a hallmark criterion in quantum chaos and quantum integrability studies. The relevant distributions corresponding to exactly integrable vs. fully chaotic systems are universal and…
In this paper we consider an approach, which allows researching a processes of order-disorder transition in various systems (with any distribution of the exchange integrals signs) in the frame of Ising model. A new order parameters, which…
The statistical properties of level spacings provide valuable insights into the dynamical properties of a many-body quantum systems. We investigate the level statistics of the Fermi-Hubbard model with dimerized hopping amplitude and find…
These lectures provide an introduction to the theory of disordered interacting electron systems. In particular, we concentrate on those aspects which are fundamental for the problem of the metal-insulator transition due to the interplay of…
The role of orbital ordering on metal-insulator transition of transition-metal oxides is investigated by the cluster self-consistent field approach in the strong correlation regime. A clear dependence of the insulating gap on the orbital…
We study the ground state phase diagram of the Anderson-Hubbard model with correlated hopping at half filling in one-dimension. The Hamiltonian has a local Coulomb repulsion $U$ and a disorder potential with local energies randomly…
This paper details the investigation of the influence of different disorders in two-dimensional topological insulator systems. Unlike the phase transitions to topological Anderson insulator induced by normal Anderson disorder, a different…
The competition between strength and correlation of coupling terms in a Hamiltonian defines numerous phenomenological models exhibiting spectral properties interpolating between those of Poisson (integrable) and Wigner-Dyson (chaotic)…
Recent experiments on the amorphous magnetic semiconductor Gd_x Si_{1-x}, Phys. Rev. Lett. 77, 4652 (1996), ibid 83, 2266 (1999), ibid 84, 5411 (2000), ibid 85, 848 (2000), have revealed an insulator-metal transition (i-m-t), as a function…
The metal-insulator transition (MIT) observed in two-dimensional (2D) systems is apparently contradictory to the well known scaling theory of localization. By investigating the conductance of disordered one-dimensional systems with a finite…
We study the two-dimensional disordered topological superconductor with Hubbard interactions. When the magnitude of the pairing potential is tuned to special values, this interacting model is exactly solvable even when disorders are imposed…
Non-standard .sty file `equations.sty' now included inline. The critical exponents of the metal--insulator transition in disordered systems have been the subject of much published work containing often contradictory results. Values ranging…
We observe a complex change in the hopping exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying a gate voltage and thermally drifting…