Related papers: A single-electron inverter
Single semiconductor quantum dots have been widely studied within devices that can apply an electric field. In the most common system, the low energy offset between the InGaAs quantum dot and the surrounding GaAs material limits the…
This paper presents a sub-switching period current-limiting control for a grid-tied inverter to prevent transient overcurrents during grid faults and enable seamless fault ride-through (FRT). Sudden grid-voltage disturbances, such as…
The mechanism of single-charge pumping using a dynamic quantum dot needs to be precisely understood for high-accuracy and universal operation toward applications to quantum current standards and quantum information devices. The type of…
A thermoelectric generator converts a temperature difference into electrical energy. Its energy conversion efficiency is determined by the steady-state temperature distribution inside the generator. By assuming the thermoelectric material…
A novel variable dc-link voltage technique is proposed to reduce the traction losses for electrical drive applications. A 100-unit cascaded multilevel converter is developed to generate the variable dc-link voltage. Experimental measurement…
We have incorporated an aluminum single electron transistor (SET) directly on top of a vertical quantum dot, enabling the use of the SET as an electrometer that is extremely responsive to the motion of charge into and out of the dot. Charge…
We demonstrate an electrically controlled high-spin (S=5/2) to low-spin (S=1/2) transition in a three-terminal device incorporating a single Mn2+ ion coordinated by two terpyridine ligands. By adjusting the gate-voltage we reduce the…
A superconductor-normal metal-superconductor mesoscopic Josephson junction has been realized in which the critical current is tuned through normal current injection using a symmetric electron cooler directly connected to the weak link. Both…
Electron tunneling through a system formed by two coupled quantum dots in a parallel geometry is considered within a generalized Anderson model. The dots are assumed to have nearly equal radii but different (and tunable) gate voltages. In…
A power efficient way to generate low power high voltage is given. The article describes various aspects of functioning and derives quantitative relations between different parameters and high voltage generated. Use of voltage multiplier…
Accuracy of single-electron currents produced in hybrid turnstiles at high operation frequencies is, among other errors, limited by electrons tunnelling in the wrong direction. Increasing the barrier transparency between the island and the…
This manuscript reports a semiconductor-sensitized thermal cell (STC) that converts ambient heat into electrical power while simultaneously reducing its own temperature under isothermal conditions. Using a printable…
We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between…
The gain of silicon photomultipliers (SiPMs) increases with bias voltage and decreases with temperature. To operate SiPMs at stable gain, the bias voltage can be readjusted to compensate for temperature changes. We have tested this concept…
The growing use of inverter-based resources in modern power systems has made grid-following inverters a central topic in power-system modeling, control, and simulation. Despite their widespread deployment, introductory material that…
We model a Superconducting Single-Electron Transistor operating by repulsive interactions. The device consists of a ring of Hubbard clusters, placed between electrodes and capacitively coupled to a gate potential. In each cluster, a pair of…
We have analyzed energy dissipation in a digital device (``Single-Electron Parametron'') in which discrete degrees of freedom are used for presenting digital information. If the switching speed is not too high, the device may operate…
Electrons move along potential or thermal gradients. In the presence of a global gradient, applied e.g. to the two terminals of a conductor, this induces electric charge and heat currents. They can also flow between two equilibrated…
Sensor nodes and IoT systems require blocks that not only consume low power but also have good accuracy. Voltage reference generators are also considered important building blocks in sensor interface circuits. This paper presents a solution…
We consider a single-electron transistor in the form of a ferromagnetic dot in contact with normal-metal and pinned ferromagnetic leads. Microwave-driven precession by the dot induces a pumped electric current. In open circuits, this…