Related papers: A single-electron inverter
The low-temperature resistivity of a SiGe 2-dimensional hole gas has been studied using the gate controlled carrier density as a parameter. A metal-insulator transition is seen both in the temperature and in the electric field behaviour.…
Edge shunts are among the main factors causing reduction in solar cell open circuit voltage that is why their isolation is one of the main steps in solar cell manufacturing. Many techniques have been employed to achieve this goal, e.g.…
We report on the realization of a single-electron source, where current is transported through a single-level quantum dot (Q), tunnel-coupled to two superconducting leads (S). When driven with an ac gate voltage, the experiment demonstrates…
It is shown that recent experiments indicating a metal-insulator transition in 2D electron systems can be interpreted in terms of a simple model, in which the resistivity is controlled by scattering at charged hole traps located in the…
Memory or transistor devices based on electron's spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field,…
Analysis of room-temperature current-voltage (I-V) characteristics of a silicon box in a nanopillar transistor suggests that a weak electromechanical coupling of 0.17 is responsible for the stable tunnel of single-electron. The dynamics…
Myoglobin single-electron transistors were investigated using nanometer- gap platinum electrodes fabricated by electromigration at cryogenic temperatures. Apomyoglobin (myoglobin without heme group) was used as a reference. The results…
We have carried out a preliminary design and simulation of a single-electron resistive switch based on a system of two linear, parallel, electrostatically-coupled molecules: one implementing a single-electron transistor and another serving…
Inverter Based Generators (IBGs) have been increasing significantly in power systems. Due to the demanding thermal rating of Power Electronics (PE), their contribution to the system Short Circuit Current (SCC) is much less than that from…
Electron tunneling between superconductors and normal metals has been used for an efficient refrigeration of electrons in the latter. Such cooling is a non-linear effect and usually requires a large voltage. Here we study the electron…
Single Electron Transistors (SETs) are nanoscale electrometers of unprecedented sensitivity, and as such have been proposed as read-out devices in a number of quantum computer architectures. We show that the functionality of a standard SET…
This paper proposes a drive train topology with a dynamically reconfigurable dc battery, which breaks hard-wired batteries into smaller subunits. It can rapidly control the output voltage and even contribute to voltage shaping of the…
Fast cryogenic switches with ultra-low power dissipation are highly sought-after for control electronics of quantum computers, space applications and next generation logic circuits. However, existing high-frequency switches are often bulky,…
We consider the fully overheated single-electron transistor, where the heat balance is determined entirely by electron transfers. We find three distinct transport regimes corresponding to cotunneling, single-electron tunneling, and a…
Using real-time charge sensing and gate pulsing techniques we measure the ratio of the rates for tunneling into the excited and ground spin states of a single-electron AlGaAs/GaAs quantum dot in a parallel magnetic field. We find that the…
We introduce a new class of mesoscopic heat engines consisting of a tunnel junction coupled to a linear thermal bath. Work is produced by transporting electrons up against a voltage bias like in ordinary thermoelectrics but heat is…
Single-electron circuits of the future, consisting of a network of quantum dots, will require a mechanism to transport electrons from one functional part to another. For example, in a quantum computer[1] decoherence and circuit complexity…
This paper proposes a new DC-AC converter with a less number of semiconductor switches and therefore gate drive and control circuit components. A salient feature of this inverter is its pure sinusoidal line-to-line voltages with no need for…
A tunneling transistor without heterojunction as a theoretical design, or more precisely controlled electron current transmission by barrier potential, is under consideration. The electrons from the conduction band of the source tunnel…
We demonstrate a device geometry for single-molecule electronics experiments that combines both the ability to adjust the spacing between the electrodes mechanically and the ability to shift the energy levels in the molecule using a gate…