Related papers: Memory Effect in Silicon Nitride in Silicon Device…
Using an approximate time-dependent density functional theory method, we calculate the absorption and luminescence spectra for hydrogen passivated silicon nanoscale structures with large aspect ratio. The effect of electron confinement in…
Recently, an atomic-scale two-dimensional silicon carbide monolayer has been synthesized {[}Polley \emph{et al., }Phys. Rev. Lett. \textbf{130},076203 (2023){]} which opens up new possibilities for developing next-generation electronic and…
Titanium nitride halides, TiNX (X = F, Cl, Br, I) in the {\alpha}-phase (orthorhombic) are exciting quasi two-dimensional (2D) electronic systems exhibiting a fascinating series of electronic ground states under different conditions.…
Fabrics of continuous fibers of carbon nanotubes (CNTFs) are attractive materials for multifunctional energy storage devices, either as current collector, or as active material. Despite a similar chemical composition,…
The quest for energy-efficient, scalable neuromorphic computing has elevated compute-in-memory (CIM) architectures to the forefront of hardware innovation. While memristive memories have been extensively explored for synaptic implementation…
Superconducting computing promises enhanced computational power in both classical and quantum approaches. Yet, scalable and fast superconducting memories are not implemented. Here, we propose a fully superconducting memory cell based on the…
The scalability of spin qubit devices is conditioned by qubit-to-qubit variability. Disorder in the host materials indeed affects the wave functions of the confined carriers, which leads to variations in their charge and spin properties.…
The real and imaginary parts of the complex refractive index of SixNyHz have been calculated using density functional perturbation theory. Optical spectra for reflectivity, adsorption coefficient, energy-loss function (ELF), and refractive…
Resistive-switching memories are alternative to Si-based ones, which face scaling and high power consumption issues. Tetrahedral amorphous carbon (ta-C) shows reversible, non-volatile resistive switching. Here we report polarity independent…
We fabricate nanolayer alumina capacitor and apply high electric fields, close to 1 GV/m, to inject charges in the dielectric. Asymmetric charge distributions have been achieved due to the selectivity of the quantum tunneling process.…
The collection of charge carriers generated in p+n strip sensors close to the Si-SiO2 interface before and after 1 MGy of X-ray irradiation has been investigated using the transient current technique with sub-nanosecond focused light pulses…
We have measured magnetic trap lifetimes of ultra-cold Rb87 atoms at distances of 5-1000 microns from surfaces of conducting metals with varying resistivity. Good agreement is found with a theoretical model for losses arising from…
Biological synapses store multiple memories on top of each other in a palimpsest fashion and at different timescales. Palimpsest consolidation is facilitated by the interaction of hidden biochemical processes that govern synaptic efficacy…
The efficiency of silicon solar cells gradually decreases in various environments, with humidity being a key factor contributing to this decline through moisture-induced degradation (MID) involving multiple mechanisms including encapsulant…
Understanding carrier trapping in solids has proven key to semiconductor technologies but observations thus far have relied on ensembles of point defects, where the impact of neighboring traps or carrier screening is often important. Here,…
The nanoelectronic applications of current ferroelectrics have been greatly impeded by their incompatibility with silicon. In this paper we propose a way to induce ferroelectricity in silicon dioxide (SiO2), which is still the most widely…
Finite-difference time-domain method is employed to investigate the optical properties of semiconductor thin films patterned with circular holes. The presence of holes enhances the coupling of the incident plane wave with the thin film and…
The influence of oxygen and carbon impurities on the concentrations of defects in silicon for detector uses, in complex fields of radiation (proton cosmic field at low orbits around the Earth, at Large Hadron Collider and at the next…
The two-dimensional (2D) IV-V semiconductors have attracted much attention due to their fascinating electronic and optical properties. In this work, we predicted three phases of silicon nitrides, denoted $\alpha$-Si$_{2}$N$_{2}$,…
A high quality amorphous silicon (a-Si) nanostructures has grown experimentally to study the origin of light emission and the quantum confinement effect in a-Si. The quantum confinement effect increases the band gap of material as the size…