Related papers: High-Resolution X-Ray Reflectivity Study of Thin L…
Pt/Ti metallisation bilayers are used as bottom electrodes for ferroelectric thin films. During deposition of the ferroelectric films, these electrodes are exposed to elevated temperatures causing modifications of the Pt/Ti bottom…
(Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 thin films were grown on IrO2 and Pt coated Si substrates. Film on Pt electrode showed large dielectric dispersion at lower frequency and on other hand film on IrO2 showed dielectric constant almost independent…
The electrical properties of thin TiO2 films have recently been extensively exploited towards enabling a variety for metal-oxide electron devices: unipolar/bipolar semiconductor devices and/or memristors. In such efforts, investigations on…
Highly porous Pt/Al thin film electrodes on yttria stabilized zirconia electrolytes were prepared by dealloying of co-sputtered Pt/Al films. The oxygen reduction capability of the resulting electrodes was analyzed in a solid oxide fuel cell…
We report optical characterization of PtSi films for thermoelectric device applications by nondestructive spectroscopic ellipsometry (SE). Pt monolayer and Pt-Si multilayer which consists of 3 pairs of Pt and Si layers were deposited on…
We report studies of ferroelectricity in ultra-thin perovskite films with realistic electrodes. The results reveal stable ferroelectric states in thin films less than 10 \AA thick with polarization normal to the surface. Under short-circuit…
A combination of experimental measurements and numerical simulations are used to characterize the mechanical and electrochemical response of thin film amorphous Si electrodes during cyclic lithiation. Parameters extracted from the…
We have studied ferroelectricity and photovoltaic effects in atomic layer deposited (ALD) 40-nm thick SnTiO$_{x}$ films deposited directly onto p-type (001)Si substrate. These films showed well-saturated, square and repeatable hysteresis…
Thin films of (1-x)BiFeO<sub>3</sub>-xPbTiO<sub>3</sub> (BF-xPT) with x ~ 0.60 were fabricated on Pt/Si substrates by chemical solution deposition of precursor BF and PT layers alternately in three different multilayer configurations. These…
The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure,…
In thin film ferroelectric capacitor the chemical and electronic structure of the electrode/FE interface can play a crucial role in determining the kinetics of polarization switching. We investigate the electronic structure of a…
BiFeO3 thin films have been deposited on Pt/sapphire and Pt/Ti/SiO2/Si substrates with pulsed laser deposition using the same growth conditions, respectively. Au was sputtered as the top electrode. The microscopic structure of the thin film…
Oblique angle deposited oxide thin films have opened up new dimensions in fabricating optical interference devices with tailored refractive index profile along thickness by tuning its microstructure by varying angle of deposition.…
Recent experimental results demonstrate that in thin films ferroelectricity persists down to film thickness of a few unit cells. This finding opens an avenue for novel electronic devices based on ultathin ferroelectrics, but also raises…
Pb(Zr0.52Ti0.48)O3 (PZT) thin films were in situ deposited by pulsed laser deposition (PLD) on Pt/Ti/SiO2/Si substrates using a template layer derived by sol-gel method. A 0.1-$\mu$m-thick PZT layer with (111) or (100)-preferred orientation…
The binary alloy of titanium-tungsten (TiW) is an established diffusion barrier in high-power semiconductor devices, owing to its ability to suppress the diffusion of copper from the metallisation scheme into the surrounding silicon…
Ferroelectrics have shown potential as a promising alternative material for future photovoltaic applications. Observance of high open circuit voltages in ferroelectric thin films, have generated considerable interest in the field of…
Integrating epitaxial BaTiO$_3$ (BTO) with Si is essential for leveraging its ferroelectric, piezoelectric, and nonlinear optical properties in microelectronics. Recently, heterogeneous integration approaches that involve growth of BTO on…
The (secondary) electron emission from multilayered Al$_2$O$_3$/TiN membranes has been investigated with a hemispherical collector system in a scanning electron microscope for electrons with energies between 0.3 and 10 keV. These ultra-thin…
This study aims towards a systematic reciprocity of the tunable synthesis parameters - partial pressure of N$_2$ gas, ion energy (\Ei) and Ti interface in TiN thin film samples deposited using ion beam sputtering at ambient temperature…