Related papers: Dielectric catastrophe at the Mott transition
By comparing the responses to an in-plane magnetic field near the metal-insulator transition (MIT), we find that the observed MIT in Si MOSFETs can be described by the non-perturbative Mott-Hubbard scenario. Interrelations between…
The variational cluster approximation is used to study the isotropic triangular-lattice Hubbard model at half filling, taking into account the nearest-neighbor ($t_1$) and next-nearest-neighbor ($t_2$) hopping parameters for magnetic…
The magnetic susceptibility of the quarter-filled one-dimensional extended Hubbard model is calculated using the density-matrix renormalization group technique. It is found that in the charge gap regime of the model ($U> 4t $ and $V > 2t$),…
We describe the two-dimensional Mott transition in a Hubbard-like model with nearest neighbors interactions based on a recent solution to the Zamolodchikov tetrahedron equation, which extends the notion of integrability to two-dimensional…
We study the strong correlation effects in the vicinity of the Mott metal-insulator transition using coupled clean or disordered Hubbard chains with a infinitely large coordinate number $D_{\perp}\to\infty$ in the direction perpendicular to…
The density-matrix renormalization group is used to study the phase diagram of the one-dimensional half-filled Hubbard model with on-site (U) and nearest-neighbor (V) repulsion, and hopping t. A critical line V_c(U) approximately equal to…
We study the magnetic properties around the Mott transition in the Kagom\'e lattice Hubbard model by the cellular dynamical mean field theory combined with quantum Monte Carlo simulations. By investigating the q-dependence of the…
We study the low energy behavior of the one dimensional Hubbard model across the Mott metal-insulator phase transition in an external magnetic field. In particular we calculate elements of the dressed charge matrix at the critical point of…
For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we…
We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical…
Filling-control metal-insulator transition on the two-dimensional Hubbard model is investigated by using the correlator projection method, which takes into account momentum dependence of the free energy beyond the dynamical mean-field…
We show that the Mott metal-insulator transition in the standard one-band Hubbard model can be understood as a topological phase transition. Our approach is inspired by the observation that the mid-gap pole in the self-energy of a Mott…
We investigate nonmagnetic metal-insulator transition in the 1/5-depleted square lattice Hubbard model at half-filling within the 8-site cellular dynamical mean field theory. We find that a metal-insulator transition without any signatures…
We investigate the Mott transition in the anisotropic kagom\'e lattice Hubbard model using the cellular dynamical mean field theory combined with continuous-time quantum Monte Carlo simulations. By calculating the double occupancy and the…
We investigate the momentum distribution function near the Mott-Hubbard transition in the one-dimensional t1-t2 Hubbard model (the zig-zag Hubbard chain), with the density-matrix renormalization-group technique. We show that for strong…
Nonlinear transport in the one dimensional Hubbard model at half-filling under a finite bias voltage is investigated by the adaptive time-dependent density matrix renormalization group method. For repulsive on-site interaction, dielectric…
We examine critical properties of the quarter-filled one-dimensional Hubbard model with dimerization and with the onsite and nearest-neighbor Coulomb repulsion U and V. By utilizing the bosonization method, it is shown that the system…
Pressure dependence of the conductivity and thermoelectric power is measured through the Mott transition in the layer organic conductor EtMe3P[Pd(dmit)2]2. The critical behavior of the thermoelectric effect provides a clear and objective…
Motivated by recent experiment on the Na$_4$Ir$_3$O$_8$ compound we study the Hubbard model on the "hyper-kagome lattice", which forms a three-dimensional network of corner sharing triangles, using dynamical cluster approximation (DCA)…
Finding microscopic models for metallic states that exhibit quantum critical properties such as $\omega/T$ scaling is a major theoretical challenge. We calculate the local dynamical spin susceptibility $\chi(T,\omega)$ for a Hubbard model…