Related papers: Magnetoresistance From Quantum Interference Effect…
We report intrinsic ferromagnetism in monolayer electrides or electrenes, in which excess electrons act as anions. Our first-principles calculations demonstrate that magnetism in such electron-rich two-dimensional (2D) materials originates…
We predict unidirectional magnetoresistance effects arising in a bilayer composed of a nonmagnetic metal and a ferromagnetic insulator, whereby both longitudinal and transverse resistances vary when the direction of the applied electric…
We analyze the origin of ferromagnetism as a result of carrier mediation in diluted magnetic oxide semiconductors in the light of the experimental evidence reported in the literature. We propose that a combination of percolation of magnetic…
The gigantic reduction of the electric resistivity under the applied magnetic field, CMR effect, is now widely accepted to appear in the vicinity of the insulator to metal transition of the perovskite manganites. Recently, we have…
Antiferromagnets are emerging as promising alternatives to ferromagnets in spintronics applications. A key feature of antiferromagnets is their anisotropic magnetoresistance (AMR), which has the potential to serve as a sensitive marker for…
From general arguments, it is shown that a magnetic Kronig-Penney model based on the thermodynamics of an Ising model can be used for describing the Colossal Magnetoresistance (CMR) phenomenon. The model considers a tunneling-like…
Quantum interference phenomena in the conductivity of mesoscopic ferromagnets are considered, particularly with regard to the effects of geometric phases acquired by electrons propagating through regions of spatially varying magnetization…
Colossal magnetoresistance (CMR) emerges from intertwined spin and charge degrees of freedom in the form of ferromagnetic clusters also known as trapped magnetic polarons. As a result, CMR is rarely observed in antiferromagnetic materials.…
Colossal electroresistance (CER) has been observed in the ferromagnetic insulating (FMI) state of a manganite. Notably, the CER in the FMI state occurs in the absence of magnetoresistance (MR). Measurements of electroresistance (ER) and…
We report on the discovery of a large, room temperature magnetoresistance (MR) effect in polyfluorene sandwich devices in weak magnetic fields. We characterize this effect and discuss its dependence on voltage, temperature, film thickness,…
We prepared epitaxial ferromagnetic manganite films on bicrystal substrates by pulsed laser ablation. Their low- and high-field magnetoresistance (MR) was measured as a function of magnetic field, temperature and current. At low…
The periodic response of magnetoresistance to an externally tunable parameter, such as magnetic field or chemical composition, in the bulk or an artificially designed material has been exploited for technological applications as well as to…
An asymmetric magnetoresistance (MR) is investigated in Py/Pt bilayers. The asymmetric MR linearly increases with current density up to a threshold, and increases more rapidly above the threshold. To reveal the origin of threshold behavior,…
We show that the current carrier density collapse in doped manganites, which results from bipolaron formation in the paramagnetic phase, leads to a colossal change of the optical conductivity in an external magnetic field at temperatures…
Further development of the graphene field-effect transistors (GFETs) for high-frequency electronics requires accurate evaluation and study of the mobility of charge carriers in a specific device. Here, we demonstrate that the mobility in…
We theoretically explore the mechanism of the colossal magnetoresistance in manganese oxides by explicitly taking into account the phase competition between the double-exchange ferromagnetism and the charge-ordered insulator. We find that…
In the history of condensed matter physics, reinvestigation of a well-studied material with enhanced quality sometimes led to important scientific discoveries. A well-known example is the discovery of fractional quantum Hall effect in high…
The magnetoresistance (MR) of CeCoIn_5 is notably different from that in many conventional metals. We show that a pronounced crossover from negative to positive MR at elevated temperatures and fixed magnetic fields is determined by the…
Large magnetoresistive materials are of immense interest for a number of spintronic applications by developing high density magnetic memory devices, magnetic sensors and magnetic switches. Colossal magnetoresistance, for which resistivity…
Quantum corrections to charge transport can give rise to an oscillatory magnetoconductance, typically observed in mesoscopic samples with a length shorter than or comparable with the phase coherence length. Here, we report the observation…