Related papers: Current driven switching of magnetic layers
In this work, we study magnetization switching induced by spin-orbit torque in W(Pt)/Co/NiO heterostructures with variable thickness of heavy-metal layers W and Pt, perpendicularly magnetized Co layer and an antiferromagnetic NiO layer.…
The material dependence of hot electron magnetotransport in a spin-valve transistor has been theoretically explored. We calculate the parallel and anti-parallel collector current changing the types and relative spin orientation of the…
We theoretically examine a cross effect of magnetic field and charge current on antiferromagnetic domain wall dynamics. Since antiferromagnetic materials are largely insensitive to external magnetic fields in general, charge current has…
We report time-resolved measurements of magnetization switching by spin-orbit torques in the absence of an external magnetic field in perpendicularly magnetized magnetic tunnel junctions (MTJ). Field-free switching is enabled by the dipolar…
The synchronized magnetization dynamics in ferromagnets on a nonmagnetic heavy metal caused by the spin Hall effect is investigated theoretically. The direct and inverse spin Hall effects near the ferromagnetic/nonmagnetic interface…
Strong, adjustable magnetic couplings are of great importance to all devices based on magnetic materials. Controlling the coupling between adjacent regions of a single magnetic layer, however, is challenging. In this work, we demonstrate…
Deterministic current-induced spin-orbit torque (SOT) switching of magnetization in a heavy transition metal/ferromagnetic metal/oxide magnetic heterostructure with the ferromagnetic layer being perpendicularly-magnetized typically requires…
A periodic drive could alter the effective exchange interactions in magnetic materials. Here, we explore how exchange pathways affect the effective interactions of periodically driven magnetic materials. Aiming to apply Floquet engineering…
The orientation of the order parameter of quantum magnets can be used to store information in a dense and efficient way. Switching this order parameter corresponds to writing data. To understand how this can be done, we study a precessional…
The magnetic phase diagram of the Mn-based semi-Heusler alloys is determined at T=0 using first-principles calculations in conjunction with the frozen-magnon approximation. We show that the magnetism in these systems strongly depends on the…
We study numerically the nonequilibrium dynamical behavior of an Ising model with mixed two-spin and four-spin interactions after a sudden quench from the high-temperature phase to the first-order phase transition point. The autocorrelation…
Magnetization switching due to a current-pulse in symmetric and asymmetric spin valves is studied theoretically within the macrospin model. The switching process and the corresponding switching parameters are shown to depend significantly…
The spin torque switching rate of an in-plane magnetized system in the presence of an applied field is derived by solving the Fokker-Planck equation. It is found that three scaling currents are necessary to describe the current dependence…
We solve appropriate drift-diffusion and Landau-Lifshitz-Gilbert equations to demonstrate that unpolarized current flow from a non-magnet into a ferromagnet can produce a precession-type instability of the magnetization. The fundamental…
Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates as building block of Spin Transfer Torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below…
We study the effects of spin transfer on thermally activated dynamics of magnetic nanopillars with identical thicknesses of the magnetic layers. The symmetric nanopillars exhibit anomalous dependencies of switching statistics on magnetic…
The effect of undesirable high-frequency free-layer switching in magnetic multilayer systems, referred to as back hopping, is investigated by means of the spin-diffusion model. A possible origin of the back-hopping effect is found to be the…
The flow of in-plane current through ultrathin magnetic heterostructures can cause magnetization switching or domain wall nucleation owing to bulk and interfacial effects. Within the magnetic layer, the current can create magnetic…
To optimize the design of STT-MRAM (spin-transfer torque magnetic random access memory), it is necessary to be able to predict switching (error) rates. For small elements, this can be done using a single-macrospin theory since the element…
By means of local ion implantation, we investigated the influence of lateral interface on current-induced magnetic switching by spin-orbit torque in a perpendicularly magnetized Pt/Co/Ta multilayer. The experimental results show that, in…