Related papers: Carrier and Light Trapping in Graded Quantum Well …
Epitaxially-grown quantum well and quantum dot solar cells suffer from weak light absorption, strongly limiting their performance. Light trapping based on optical resonances is particularly relevant for such devices to increase light…
Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an…
Solid state lasers are demanding independent control in the gain media and cavity loss to achieve ultra short laser pulses using passive mode-locking. Recently, laser mode-locking is achieved with a MBE structure with multiple quantum…
We propose an engineering of the optical properties of GaAs/AlGaAs quantum wells using AlAs and InAs monolayer insertions. A quantitative study of the effects of the monolayer position and the well thickness on the interband and…
Quantum confinement is recognized to be an inherent property in low-dimensional structures. Traditionally it is believed that the carriers trapped within the well cannot escape due to the discrete energy levels. However, our previous…
We show that, by monitoring the free carrier reservoir in a GaAs-based quantum well microcavity under nonresonant pulsed optical pumping, lasing supported by a fermionic reservoir (photon lasing) can be distinguished from lasing supported…
A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant densities of indirect excitons can accumulate in…
By selective doping (Be) of the well and barrier regions of p-GaAs/AlGaAs structures we have realized the situation where the upper Hubbard band (A+ centers) has been occupied by holes in the equilibrium. We studied temperature behavior of…
When light is confined in all three directions and in dimensions of the order of the light wavelength, full discretization of the photon spectra and distinctive phenomena occur, the Purcell effect and the inhibition of emission of atoms…
High-density and ultracold atomic gases have emerged as promising media for storage of individual photons for quantum memory applications. In this paper we provide an overview of our theoretical and experimental efforts in this direction,…
Efficient and long-lived interfaces between light and matter are crucial for the development of quantum information technologies. Integrated photonics solutions for quantum storage devices offer improved performances due to light…
We have investigated the optical and transport properties of MBE grown short-period superlattices of InAs/GaAs with different numbers of periods (3 <= N <= 24) and a total thickness 14 nm. Bandstructure calculations show that these…
We derive threshold equations for self-organization of laser driven atoms in an optical cavity. Our analysis includes probing with either a traveling wave or a retro reflected lattice. These two scenarios lead to qualitatively different…
Photocarrier transport and extraction in GaAsSb/GaAsN type-II quantum well superlattices are investigated by means of inelastic quantum transport calculations based on the non-equilibrium Green's function formalism. Evaluation of the local…
We analyze internal device physics, performance limitations, and optimization options for a unique laser design with multiple active regions separated by tunnel junctions, featuring surprisingly wide quantum wells. Contrary to common…
Computer simulations with Synopsys' Sentaurus TCAD are used to study the effect of the molar concentration of aluminum in the active and waveguide regions on the energy spectrum of carriers in Quantum Well (QW) and the optical spectral…
The carrier recombination dynamics of InGaP/InGaAsP quantum wells are reported for the first time. By studying the photoluminescence (PL) and time-resolved PL decay of InGaP/InGaAsP multiple-quantum-well(MQW) heterostructure samples, it is…
Quantum well (QW) structures are widely used in lasers, semiconductor optical amplifiers, modulators, enabling their monolithic integration on the same substrate. As optoelectronic systems evolve to meet the growing bandwidth demands in the…
Quantum illumination can utilize entangled light to detect the low-reflectivity target that is hidden in a bright thermal background. This technique is applied to the detection of an object in the curved spacetime of the Earth, in order to…
The paper reports optical orientation experiments performed in the narrow GaAs/AlGaAs quantum wells doped with Mn. We experimentally demonstrate a control over the spin polarization by means of the optical orientation via the…