Related papers: Optical transitions in broken gap heterostructures
We investigate the zero-temperature phase diagram of interacting Bose gases in the presence of a simple cubic optical lattice, going beyond the regime where the mapping to the single-band Bose-Hubbard model is reliable. Our computational…
Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductor that feature strong variations of their band gap as a function of the number of layers in the…
Before assessing the suitability of a semiconductor for specific applications, the first question to ask is whether it possesses a direct or indirect band gap. This distinction is fundamental, as the operation of devices such as…
The interactions between different layers in van der Waals heterostructures have a significant impact on the electronic and optical characteristics. By utilizing the intrinsic dipole moment of Janus transition metal dichalcogenides (TMDs),…
Optical lattice loaded with cold atoms can exhibit a tunable photonic band gap for a weak probe field under the conditions of electromagnetically induced transparency. This system possesses a number of advantageous properties, including…
We provide a phase-space perspective for the analysis of the superfluid-insulator transition for finite-size Bose-Hubbard circuits. We explore how the eigenstates parametrically evolve as the inter-particle interaction is varied, paying…
We have calculated the conduction-to-conduction and valence-to-valence absorption spectrum of bound states in (In,Ga)As/GaAs quantum dots charged with up to three electrons or holes. Several features emerge: (i) In pure (non-alloyed)…
The quantum states of an ellipsoidal nanocluster of a heterophase system InAs / GaAs are studied using an exact analytical approach, in contrast to the generally accepted theoretical model based on the adiabatic approximation. It is shown…
We have studied a series of InAs/GaSb coupled quantum wells using magneto-infrared spectroscopy for high magnetic fields up to 33T within temperatures ranging from 4K to 45K in both Faraday and tilted field geometries. This type of coupled…
We observe the magnetic oscillation of electric conductance in the two-dimensional InAs/GaSb quantum spin Hall insulator. Its insulating bulk origin is unambiguously demonstrated by the antiphase oscillations of the conductance and the…
A splitting of the fundamental optical modes in micro/nano-cavities comprising semiconductor heterostructures is commonly observed. Given that this splitting plays an important role for the light-matter interaction and hence quantum…
The electronic properties of hydrogenated graphenes are investigated with the first-principles calculations. Geometric structures, energy bands, charge distributions, and density of states (DOS) strongly depend on the different…
Electron-hole hybridization in InAs/GaSb double quantum well structures leads to the formation of a mini band gap. We experimentally and theoretically studied the impact of strain on the transport properties of this material system. Thinned…
We present an analytical model showing how the gauge-invariant loop phase in a three-level closed-loop atomic system imprints as bright-dark lobes in Laguerre Gaussian probe beam intensity patterns. In the weak probe limit, the output…
The contribution of the fundamental gap E_ as well as those of the E_ + Delta(so) and E+ transitions to the dielectric function of GaAs1-xNx alloys near the band edge were determined from variable-angle spectroscopic ellipsometry and…
Bandstructure engineering using alloying is widely utilised for achieving optimised performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals…
Two-dimensional electron dispersions with peculiar band crossings provide a platform for realizing topological phases of matter. Here we theoretically show that the $e_g$-orbital manifold of honeycomb-layered transition metal compounds…
Bi alloying is predicted to transform GaAs from a semiconductor to a topological insulator or semi-metal. To date, studies of the GaAs$_{1-x}$Bi$_x$ alloy band structure have been limited, and the origins of Bi-induced enhancement of the…
We investigate two-dimensional hole transport in GaSb quantum wells at cryogenic temperatures using gate-tunable devices. Measurements probing the valence band structure of GaSb unveil a significant spin splitting of the ground subband…
Recent realizations of exotic topological states in condensed matter and cold atoms have advanced the exploration for topological characteristics, such as invariant topological orders and band inversion. Here we construct a 1D optical…