Related papers: Low field negative magnetoresistance in double lay…
The power and energy consumption of resistive switching devices can be lowered by reducing their active layer dimensions. Efforts to push this low-energy switching property to its limits have led to the investigation of active regions made…
Using the Feynman diagram techniques, we derive the finite-temperature conductivity and magnetoconductivity formulas from the quantum interference and electron-electron interaction, for a three-dimensional disordered Weyl semimetal. For a…
High quality strongly correlated two-dimensional (2D) electron systems at low temperatures $T\rightarrow 0$ exhibits an apparent metal-to-insulator transition (MIT) at a large $r_s$ value around 40. We have measured the magnetoresistance of…
The magnetoresistance of a low carrier density, disordered GaAs based two-dimensional (2D) electron gas has been measured in parallel magnetic fields up to 32 T. The feature in the resistance associated with the complete spin polarization…
Understanding magnetoresistance, the change in electrical resistance upon an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials…
We report on room temperature magnetoresistance and low frequency noise in sub-100nm elliptic CoFeB/MgO/CoFeB magnetic tunnel junctions with ultrathin (0.9nm) barriers. For magnetic fields applied along the hard axis, we observe current…
We show that, due to the weak ferromagnetism of La$_{2-x}$Sr$_x$CuO$_4$, an external magnetic field leads to a dimensional crossover 2D $\to$ 3D for the in-plane transport. The crossover results in an increase of the hole's localization…
Tunneling surface current through a thin ferromagnetic barrier in a three-dimensional topological insulator is shown to possess an extraordinary response to the orientation of barrier magnetization. In contrast to conventional…
Motivated by recent experimental results reporting anomalous drag resistance behavior in dilute bilayer two-dimensional (2D) hole systems in the presence of a magnetic field parallel to the 2D plane, we have carried out a many-body Fermi…
Theory of weak localization is developed for electrons in semiconductor quantum wells grown along [110] and [111] crystallographic axes. Anomalous conductivity correction caused by weak localization is calculated for symmetrically doped…
Magnetoresistance measurements of highly underdoped superconducting La_{2-x}Sr_xCuO_4 films with $x = 0.051$ and $x = 0.048$, performed in dc magnetic fields up to 20 T and at temperatures down to 40 mK, reveal a magnetic-field induced…
The magnetoresistance of a granular superconductor in a strong magnetic field destroying the gap in each grain is considered. It is assumed that the tunneling between grains is sufficiently large such that all conventional effects of…
Two-dimensional (2D) materials can host stable, long-range magnetic phases in the presence of underlying magnetic anisotropy. The ability to realize the full potential of 2D magnets necessitates systematic investigation of the role of…
The weak magnetic field induced reduction of the low-temperature superfluid density in cuprate superconductors is studied based on the kinetic energy driven superconducting mechanism. The electromagnetic response kernel is evaluated by…
The LAO/STO interface hosts a two-dimensional electron system that is unusually sensitive to the application of an in-plane magnetic field. Low-temperature experiments have revealed a giant negative magnetoresistance (dropping by 70\%),…
We develop a theory of magnetoresistance of two-dimensional electron systems in a smooth disorder potential in the hydrodynamic regime. Our theory applies to two-dimensional semiconductor structures with strongly correlated carriers when…
The influence of insertion of an ultra-thin NiO layer between the MgO barrier and ferromagnetic electrode in magnetic tunnel junctions has been investigated by measuring the tunneling magnetoresistance and the X-ray magnetic circular…
The resistivity of disordered metallic layer sandwiched by two ferromagnetic layers at low-temperature is investigated theoretically. It is shown that the magnetic field acting at the interface does not affect the classical Boltzmann…
The present work aims to address the electronic and magnetic properties of the intermetallic compound GdPd$_2$Bi through a comprehensive study of the structural, magnetic, electrical and thermal transport on a polycrystalline sample,…
The presence of localized spins exerts a strong influence on quantum localization in doped semiconductors. At the same time carrier-mediated interactions between the localized spins are modified or even halted by carriers' localization. The…