Related papers: Ferromagnetism in III-V and II-VI semiconductor st…
When combined with transition metals with partially filled $d$-orbitals, magnetism can be incorporated in two-dimensional materials, which greatly expands the scope for fundamental researches and potential applications of these materials.…
The conditions under which ferromagnetism may occur in transition metal oxides with partially filled $t_{2g}$ shells such as vanadium-based perovskites are studied using a combination of density functional and single-site dynamical mean…
In semiconductor spintronic devices, the semiconductor is usually lightly doped and nondegenerate, and moderate electric fields can dominate the carrier motion. We recently derived a drift-diffusion equation for spin polarization in the…
In this paper we review the latest achievements of density functional theory in understanding the physics of diluted magnetic semiconductors. We focus on transition metal doped III-V semiconductors, which show spontaneous ferromagnetic…
We develop a mean-field theory of carrier-induced ferromagnetism in diluted magnetic semiconductors. Our approach represents an improvement over standard RKKY model allowing spatial inhomogeneity of the system, free-carrier spin…
The electronic structure of the VAs compound in the zinc-blende structure is investigated using a combined density-functional and dynamical mean-field theory approach. Contrary to predictions of a ferromagnetic semiconducting ground state…
A microscopic Hamiltonian for interacting manganese impurities in diluted magnetic semiconductors (DMS) is derived. It is shown that in p -type III-V DMS the indirect exchange between Mn impurities has similarities with the Zener mechanism…
Vision of ferromagnet/semiconductor hybrid as a strongly coupled but flexible spin system is presented. We analyze the experiments and argue that contrary to the common sense the nonmagnetic semiconductor plays a crucial role in…
A review of new developments in theoretical and experimental electronic structure investigations of half-metallic ferromagnets (HMF) is presented. Being semiconductors for one spin projection and metals for another ones, these substances…
Motivated by the recent experimental observation of long range ferromagnetic order at a relatively high temperature of 200K in the Fe-doped ZnGa$_2$O$_4$ semiconducting spinel, we propose a possible mechanism for the observed ferromagnetism…
Ferromagnetism is most common in transition metal compounds but may also arise in low-density two-dimensional electron systems, with signatures observed in silicon, III-V semiconductor systems, and graphene moir\'e heterostructures. Here we…
Using first principles calculations as based on density functional theory, we propose a class of so far unexplored diluted ferromagnetic semiconductors and half-metals. Here, we study the electronic properties of recently synthesized $ 4d $…
We predict that a novel bias-voltage assisted magnetization reversal process will occur in Mn doped II-VI semiconductor quantum wells or heterojunctions with carrier induced ferromagnetism. The effect is due to strong exchange-coupling…
After decades of research, the low Curie temperature of ferromagnetic semiconductors remains the key problem in the development of magnetic semiconductor spintronic technologies. Removing this roadblock might require a change of the field's…
Many-particle electron states in semiconductor quantum dots with carrier-mediated ferromagnetism are studied theoretically within the self-consistent Boltzmann equation formalism. Depending on the conditions, a quantum dot may contain there…
We study the quantum interference effects induced by the Aharonov-Casher phase in asymmetrically confined two-dimensional electron and heavy-hole ring structures systems taking into account the electrically tunable spin-orbit (SO)…
We present a theory for carrier induced ferromagnetism in diluted magnetic semi-conductor (DMS). Our approach treats on equal footing quantum fluctuations within the RPA approximation and disorder within CPA. This method allows for the…
Spins of charge carriers, paramagnetic centers, and nuclei in semiconductor structures are known to be oriented if circular-polarized light is shined upon the structure. This is due to transfer of angular momentum from photons to various…
The interplay of tunneling transport and carrier-mediated ferromagnetism in narrow semiconductor multi-quantum well structures containing layers of GaMnAs is investigated within a self-consistent Green's function approach, accounting for…
The magnetic properties of the two-channel periodic Anderson model for uranium ions, comprised of a quadrupolar and a magnetic doublet are investigated through the crossover from the mixed-valent to the stable moment regime using dynamical…