Related papers: Vortex state in a doped Mott insulator
Motivated by the experimental realization of synthetic spin-orbit coupling for ultracold atoms, we investigate the phase diagram of the Bose Hubbard model in a non-abelian gauge field in two dimensions. Using a strong coupling expansion in…
A key aspect of ultracold bosonic quantum gases in deep optical lattice potential wells is the realization of the strongly interacting Mott insulating phase. Many characteristics of this phase are well understood, however little is known…
This article surveys the physics of systems proximate to Mott insulators, and presents a classification using conventional and topological order parameters. This classification offers a valuable perspective on a variety of conducting…
Gutzwiller variational method is applied to an effective two-dimensional Hubbard model to examine the recently proposed gossamer superconductor by Laughlin. The ground state at half filled electron density is a gossamer superconductor for…
We argue that aspects of the anomalous, low temperature, spin and charge dynamics of the high temperature superconductors can be understood by studying the corresponding physics of undoped Mott insulators. Such insulators display a quantum…
The doping and temperature dependence of the thermodynamic properties in cuprate superconductors is studied based on the kinetic energy driven superconducting mechanism. By considering the interplay between the superconducting gap and…
The numerically exact diagonalization study on small clusters of the t-J model with the second- and third- neighbor hopping terms shows that a novel spin liquid state is realized around a doped hole with momentum k=(pi,0) and energy \sim 2J…
We systematically investigate the ground state and elementary excitations of a Bose-Einstein Condensate with a synthetic vector potential, which is induced by the many-body effects and atom-light coupling. For a sufficiently strong…
We examine the dynamical magnetic response in a two-component resonating-valence-bond (RVB) description of the doped Mott insulator. The half-filled antiferromagnetic phase described by the Schwinger-boson mean-field theory will evolve into…
The phase diagram of the high-Tc cuprates is dominated by the Mott insulating phase of the parent compounds. As we approach it from large doping, a standard Fermi-liquid gradually turns into a bad non-Fermi liquid metal, a process which…
In condensed matter physics, Kramers-Wannier duality implies that the state disordered by quantum fluctuations or temperature actually corresponds with an ordered state formed from the topological excitations of the 'original' ordered…
We develop a slave-boson theory for the t-J model at finite doping which respects an SU(2) symmetry -- a symmetry previously known to be important at half filling. The mean field phase diagram is found to be consistent with the phases…
Possible superconductivity in recently discovered (Tl,K)Fe$_x$Se$_2$ compounds is studied from the viewpoint of doped Mott insulator. The Mott insulating phase is examined to be preferred in the parent compound at $x=1.5$ due to the…
Detailed understanding of the role of single dopant atoms in host materials has been crucial for the continuing miniaturization in the semiconductor industry as local charging and trapping of electrons can completely change the behaviour of…
We reinvestigate a doped antiferromagnetic Mott insulator based on the slave-fermion approach of the t-J model, where antiferromagnetic spin fluctuations and doped holes are described by bosonic spinons and fermionic holons, respectively.…
The path from a Mott insulating phase to high temperature superconductivity encounters a rich set of unconventional phenomena involving the insulator-to-metal transition (IMT) such as emergent electronic orders and pseudogaps that…
In this paper we explore the incommensurate spatial modulation of spin-spin correlations as the intrinsic property of the doped Mott insulator, described by the $t-J$ model. We show that such an incommensurability is a direct manifestation…
For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we…
The problem of doping Mott insulators is of fundamental importance and long-standing interest in the study of strongly correlated electron systems. The advent of semiconductor based moir\'e materials opens a new ground for simulating the…
We study the effects of hole doping on one-dimensional Mott insulators with orbital degrees of freedom. We describe the system in terms of a generalized t-J model. At a specific point in parameter space the model becomes integrable in…