Related papers: Analytical Charge-Control Model for DH-HEMT
This paper presents a real time distributed control strategy for electric vehicles charging covering both drivers and grid players' needs. Computation of the charging load curve is performed by agents working at the level of each single…
The momentum-weighted sum of the charges of tracks associated to a jet provides an experimental handle on the electric charge of fundamental strongly-interacting particles. An overview of a study of this jet charge observable for jets…
The electronic response of a two-dimensional (2D) electron system represents a key quantity in discussing one-electron properties of electrons in semiconductor heterojunctions, on the surface of liquid helium and in copper-oxide planes of…
Control of consumer electrical devices for providing electrical grid services is expanding in both the scope and the diversity of loads that are engaged in control, but there are few experimentally-based models of these devices suitable for…
The ALPHA collaboration has successfully demonstrated the production and the confinement of cold antihydrogen, $\overline{\mathrm{H}}$. An analysis of trapping data allowed a stringent limit to be placed on the electric charge of the…
We study the net-charge fluctuations, $D$-measure variable, in high energy heavy-ion collisions in heavy-ion jet interaction generator (HIJING), ultrarelativistic quantum molecular dynamics (UrQMD) and hadron resonance gas (HRG) models for…
We investigate the dynamics of charge--states coherence in a degenerate double--dot Aharonov--Bohm interferometer with finite interdot Coulomb interactions. The quantum coherence of the charge states is found to be sensitive to the…
Measurements of a Higgs boson at the Large Hadron Collider (LHC) have become increasingly consistent with the predictions of the Standard Model (SM). This fact puts severe constraints on many potential low-energy extensions of the Higgs…
The functional-renormalization-group aided density-functional theory (FRG-DFT) is applied to the two-dimensional homogeneous electron gas (2DHEG). The correlation energy of the 2DHEG is derived as a function of the Wigner-Seitz radius $…
In this article we propose and numerically implement a mathematical model for the simulation of three-dimensional semiconductor devices characterized by an heterogeneous material structure. The model consists of a system of nonlinearly…
The prediction of battery rate performance traditionally relies on computation-intensive numerical simulations. While simplified analytical models have been developed to accelerate the calculation, they usually assume battery performance to…
Active thermal control is crucial in achieving the required accuracy and throughput in many industrial applications, e.g., in the medical industry, high-power lighting industry, and semiconductor industry. Thermoelectric Modules (TEMs) can…
The electron-positive fermion gas in three dimensions and $T=0$ is modeled as two independent fermion gases interacting via the coulomb interaction. The main advantage of the simple model is that all existing results from the electron gas…
We study dynamics of an artificial two-level atom in an open 1D space by measuring evolution of its coherent and incoherent emission. States of the atom -- a superconducting flux qubit coupled to a transmission line -- are fully controlled…
We discuss tests of the charged Higgs sector of the Two Higgs Doublet Model (2HDM) of Type II in the light of recent flavour physics data. Particular attention is paid to recent measurement of purely leptonic decays of heavy-light mesons,…
Despite considerable advancements, high electron mobility transistors (HEMTs) based on gallium nitride (GaN) channels remain largely limited to power applications below 650 V. For higher power demands, the ultra-wide bandgap semiconductor…
A new compact modeling approach is presented which describes the full current-voltage (I-V) characteristic of high-performance (aggressively scaled-down) tunneling field-effect-transistors (TFETs) based on homojunction direct-bandgap…
We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers…
Mechanisms of charging-up and charging-down of Gas Electron Multiplier (GEM) have been studied. Experimental investigations have been carried out on both dielectric polarization and radiation charging of GEMs. Environmental parameters, such…
We use charge sensing to detect entropy changes in a double quantum dot defined by electrostatic gating of a GaAs/AlGaAs heterostructure. This system can be tuned to be two separate systems, like two independent, artificial atoms, or a…