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Related papers: Metal-Insulator Transition in C60-Polymers

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We investigate the metal insulator transitions at finite temperature for the Hubbard model with diagonal alloy disorder. We solve the dynamical mean field theory equations with the non crossing approximation and we use the coherent…

Strongly Correlated Electrons · Physics 2009-11-11 P. Lombardo , R. Hayn , G. I. Japaridze

We present a model for the metal-insulator transition in 2D, observed in the recent years. Our starting point consists of two ingredients only, which are ubiquitous in the experiments: Coulomb interactions and weak disorder spin-orbit…

Disordered Systems and Neural Networks · Physics 2015-06-24 George Kastrinakis

The low-temperature resistivity of a SiGe 2-dimensional hole gas has been studied using the gate controlled carrier density as a parameter. A metal-insulator transition is seen both in the temperature and in the electric field behaviour.…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 V. Senz , U. Doetsch , U. Gennser , T. Ihn , T. Heinzel , K. Ensslin , R. Hartmann , D. Gruetzmacher

The filling-controlled metal-insulator transition (MIT) in a two-dimensional Mott-Hubbard system La1.17-xPbxVS3.17 has been studied by photoemission spectroscopy. With Pb substitution x, chemical potential mu abruptly jumps by ~ 0.07 eV…

Strongly Correlated Electrons · Physics 2009-11-10 A. Ino , T. Okane , S. -I. Fujimori , A. Fujimori , T. Mizokawa , Y. Yasui , T. Nishikawa , M. Sato

We consider a model which includes the electron-phonon coupling to Ag or Jahn-Teller Hg phonons, the Coulomb interaction U and an exchange integral K. We study the metal-insulator transition for the integer fillings n=3 and 4. We find that…

Strongly Correlated Electrons · Physics 2009-10-31 J. E. Han , O. Gunnarsson

Temperature-driven metal-insulator and pressure-driven insulator-metal transitions observed in(BEDT-TTF)8[Hg4X12(C6H5Y)2]] with X = Y = Br are studied through band structure calculations based on X-ray crystal structure determination and…

In the previous papers (Journ. of Phys. Stud. 2, 362 (1998); cond-mat/9811213) we have studied metal-insulator transition in a generalized Hubbard model with correlated hopping at half-filling and zero temperature. The present paper is…

Strongly Correlated Electrons · Physics 2007-05-23 Leonid Didukh , Vasyl Hankevych

We determine the electronic structure and phase stability of paramagnetic V$_2$O$_3$ at the Mott-Hubbard metal-insulator phase transition, by employing a combination of an ab initio method for calculating band structures with dynamical…

Strongly Correlated Electrons · Physics 2015-06-11 I. Leonov , V. I. Anisimov , D. Vollhardt

Delicate engineering of the bands remains challenging due to complex electronic, structural, and compositional interplay. We demonstrate the formation of distinct metallic and insulating ground states in ultra-thin copper sulfide films by…

The question of whether electron-electron interactions can drive a metal to insulator transition in graphene under realistic experimental conditions is addressed. Using three representative methods to calculate the effective long-range…

Strongly Correlated Electrons · Physics 2015-11-17 Ho-Kin Tang , E. Laksono , J. N. B. Rodrigues , P. Sengupta , F. F. Assaad , S. Adam

Although C$_{60}$ is a molecular crystal with a bandgap E$_g$ of ~2.5 eV, we show that E$_g$ is strongly affected by injected charge. In sharp contrast to the Coulomb blockade typical of quantum dots, E$_g$ is {\it reduced} by the Coulomb…

Materials Science · Physics 2009-11-10 Z. H. Lu , C. C. Lo , C. J. Huang , M. W. C. Dharma-wardana , Marek Z. Zgierski

We observe an insulator-to-metal (I-M) transition in crystalline silicon doped with sulfur to non- equilibrium concentrations using ion implantation followed by pulsed laser melting and rapid resolidification. This I-M transition is due to…

Materials Science · Physics 2015-05-27 Mark T. Winkler , Daniel Recht , Meng-Ju Sher , Aurore J. Said , Eric Mazur , Michael J. Aziz

I present an informal discussion of various cases where two-dimensional surface metal-insulator structural and charge-density-wave instabilities driven by partly filled surface states have been advocated. These include reconstructions of…

Condensed Matter · Physics 2007-05-23 E. TOSATTI

We investigate the influence of an unoccupied band on the transport properties of a strongly correlated electron system. For that purpose, additional orbitals are coupled to a Hubbard model via hybridization. The filling is one electron per…

Condensed Matter · Physics 2009-10-28 Stefan Blawid , Hoangh Anh Tuan , Takashi Yanagisawa , Peter Fulde

Metal-to-insulator transitions (MIT) can be driven by a number of different mechanisms, each resulting in a different type of insulator -- Change in chemical potential can induce a transition from a metal to a band insulator; strong…

Recent experiments on the two dimensional electron gas in various semiconductor devices have revealed an unexpected metal-insulator transition and have challenged the previously held assumption that there is no such transition in two…

Strongly Correlated Electrons · Physics 2017-02-08 Sudip Chakravarty , Steven Kivelson , Chetan Nayak , Klaus Voelker

Pressure induced isostructural insulator to metal transition for SmS is characterised by the presence of an intermediate valence state at higher pressure which cannot be captured by the density functional theory. As a direct outcome of…

Strongly Correlated Electrons · Physics 2022-06-01 Debalina Banerjee , Evgeny Plekhanov , Ivan Rungger , Cedric Weber

Experimental results on the metal-insulator transition and related phenomena in strongly interacting two-dimensional electron systems are discussed. Special attention is given to recent results for the strongly enhanced spin susceptibility,…

Strongly Correlated Electrons · Physics 2016-11-18 A. A. Shashkin , S. V. Kravchenko

Magnetization curve and changes of the single-particle excitation spectra by magnetic field are calculated for the periodic Anderson model at half-filling in infinite spatial dimension by using the exact diagonalization method. It is found…

Condensed Matter · Physics 2009-10-28 Tetsuro Saso , Masatoshi Itoh

We study how the Mott metal-insulator transition (MIT) is affected when we have to deal with electrons with different angular momentum quantum numbers. For that purpose we apply ab-initio quantum-chemical methods to lithium rings in order…

Strongly Correlated Electrons · Physics 2009-11-10 Beate Paulus , Krzysztof Rosciszewski , Peter Fulde , Hermann Stoll