Related papers: Design-Oriented Modeling of TSV Substrate Noise Co…
This paper reports a novel simulation methodology for analysis and prediction of substrate noise impact on analog / RF circuits taking into account the role of the parasitic resistance of the on-chip interconnect in the impact mechanism.…
As superconducting qubit circuits become more complex, addressing a large array of qubits becomes a challenging engineering problem. Dense arrays of qubits benefit from, and may require, access via the third dimension to alleviate…
Three Dimensional Integrated Circuits (3D IC) offer lower power consumption, higher performance, higher bandwidth, and scalability over the conventional two dimensional ICs. Through-Silicon Via (TSV) is one of the fabrication mechanisms…
Increasing circuit complexity within quantum systems based on superconducting qubits necessitates high connectivity while retaining qubit coherence. Classical micro-electronic systems have addressed interconnect density challenges by using…
The semiconductor industry's rapid advancement pushes conventional two-dimensional technology to its utmost limitations in terms of scaling, performance, and cost factors. These challenges drive the usage of 3D technology in the production…
Low-power quadrature voltage-controlled oscillator (QVCO) design utilizing transformer-feedback and current-reuse techniques with increased frequency range is proposed in this paper. With increasing demand for QVCOs in on-chip applications,…
We propose superconducting-semiconducting (super-semi) qubit and coupler designs based on high-quality, compact through-silicon vias (TSVs). An interposer "probe" wafer containing TSVs is used to contact a sample wafer with, for example, a…
This paper presents a system-level analytical framework for modeling and minimizing phase noise in body-biased cross-coupled LC-tank voltage-controlled oscillators (LC-VCOs). Building upon Impulse Sensitivity Function (ISF) theory, the…
The Through Silicon Via (TSV) process developed by Silex provides down to 30 micrometers pitch for through wafer connections in up to 600 micrometers thick substrates. Integrated with MEMS designs it enables significantly reduced die size…
This work focuses on the fabrication of niobium through silicon vias (TSV) superconductors interconnects. The effect of supercycle of sequential oxidation and chemical etching process on the through-etch wall quality was investigated. It…
We present a set of experimental results concerning the power spectrum of current noise, detected on a granular high Tc superconductor submitted either to a slowly varying magnetic field or to a varying current intensity. Experiments were…
With the evolution of radio frequency (RF)/microwave technology, there is a demand for circuits which are able to meet highly challenging RF frontend specifications. Silicon-on-insulator (SOI) technology is one of the leading platforms for…
Application Specific Integrated Circuits (ASICs) are commonly used to efficiently process the signals from sensors and detectors in space. Wire bonding is a space qualified technique of making interconnections between ASICs and their…
3-D integrated circuits (3-D ICs) offer performance advantages due to their increased bandwidth and reduced wire-length enabled by through-silicon-via structures (TSVs). Traditionally TSVs have been considered to improve the thermal…
Micro-Raman spectroscopy was employed to study the near-surface stress distributions and origins in Si around through silicon vias (TSVs) at both room temperature and elevated temperatures for Cu-filled and CNT-filled TSV samples. From the…
Application Specific Integrated Circuits (ASICs) are used in space-borne instruments for signal processing and detector readout. The electrical interface of these ASICs to frontend printed circuit boards (PCBs) is commonly accomplished with…
Correlated noise across multi-qubit architectures is known to be highly detrimental to the operation of error correcting codes and the long-term feasibility of quantum processors. The recent discovery of spatially dependent correlated noise…
Twist-angle control offers a bias-free route to reconfigurable metasurfaces, yet its extension to deeply subwavelength resonant platforms at VHF/UHF remains limited. We demonstrate a sub-GHz double-layer wire metasurface formed by two…
The bias-dependence of input referred low-frequency noise (LFN), SVG, is a considerable facet for RF circuit design. SVG was considered constant in silicon transistors but this was contradicted by recent experimental and theoretical…
In this study, we report the first Cu-filled through silicon via (TSV) integrated ion trap. TSVs are placed directly underneath electrodes as vertical interconnections between ion trap and a glass interposer, facilitating the arbitrary…