Related papers: 2D GaSe-Based Single-Pixel Spectrometer via Electr…
The development of robust and efficient single photon emitters (SPEs) at telecom wavelengths is critical for advancements in quantum information science. Two-dimensional (2D) materials have recently emerged as promising sources for SPEs,…
We present a single-photon-sensitive spectrometer, based on a linear array of 512 single-photon avalanche diode detectors, with 0.04 nm spectral and 40 ps temporal resolutions. We employ a fast data-driven operation that allows direct…
The integration of different two-dimensional materials within a multilayer van der Waals (vdW) heterostructure offers a promising technology for realizing high performance opto-electronic devices such as photodetectors and light sources1-3.…
Neutron imaging is an invaluable noninvasive technique for exploring new science and assisting industrial manufacture. However, state-of-the-art neutron facilities are extremely expensive and inconvenient to access, while the flux of…
Dual-polarization heterodyne receivers operating at 325 GHz, 424 GHz, and 650 GHz at room temperature are presented. Polarimetric measurements are enabled by two orthogonal open-ended E-field probes, co-optimized and integrated with two…
We propose a polarization-insensitive and high-efficiency plasmonic silicon Schottky diode for detection of sub-bandgap photons in the optical communication wavelength range through internal photoemission. Our photodiode is based on a…
The challenge of next generation datacom and telecom communication is to increase the available bandwidth while reducing the size, cost and power consumption of photonic integrated circuits. Silicon (Si) photonics has emerged as a viable…
Single-photon emitters (SPEs) hosted by two-dimensional (2D) semiconducting materials are envisioned for next-generation quantum applications. However, SPE creation in 2D semiconductors on rigid substrates like SiO2/Si via nanoindentation…
This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of $\beta$-Ga$_2$O$_3$ by insertion of an ultra-thin SiO$_2$ dielectric interlayer at the metal-semiconductor junction, which can…
We demonstrate the first achievement of continuous-wave (CW) pumped second harmonic generation (SHG) in few- and mono-layer gallium selenide (GaSe) flakes, which are coated on silicon photonic crystal (PC) cavities. Because of ultrahigh…
Efficiently distinguishing photon numbers is a crucial yet challenging technology for various quantum information and quantum metrology applications. While superconducting transition edge sensors offer good photon-number-resolving (PNR)…
$\beta$-Ga$_2$O$_3$ is a next-generation ultra wide bandgap semiconductor (E$_g$ = 4.8 eV to 4.9 eV) that can be homoepitaxially grown on commercial substrates, enabling next-generation power electronic devices among other important…
We propose a robust photonic platform for encapsulation and addressing of optically active 2D- and nano-materials. Our implementation utilises a monolayer of MoS$_2$ transition metal dichalcogenide embedded in an elastomeric waveguide chip.…
Gallium selenide (GaSe) is a novel two-dimensional material, which belongs to the layered III-VIA semiconductors family and attracted interest recently as it displays single-photon emitters at room temperature and strong optical…
We have made a single-photon detector that relies on photoconductive gain in a narrow electron channel in an AlGaAs/GaAs 2-dimensional electron gas. Given that the electron channel is 1-dimensional, the photo-induced conductance has…
Advances in high-resolution laser spectroscopy have enabled many scientific breakthroughs in physics, chemistry, biology and astronomy. Optical frequency combs have pushed measurement limits with ultrahigh-frequency accuracy and…
GaSe is an important member of the post-transition metal chalcogenide family and is an emerging two-dimensional (2D) semiconductor material. Because it is a van der Waals material, it can be fabricated into atomic-scale ultrathin films,…
Single-pixel imaging (SPI) has offered an unprecedented technique for capturing a targeted scenes without requiring either raster-scanned systems or muti-pixel detectors. However, in the current research, there are rare study reports about…
We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial…
Arrays of photodetector-based pixel sensors are ubiquitous in modern devices, such as smart phone cameras, automobiles, drones, laptops etc. Two dimensional (2D) material-based photodetector arrays are a relevant candidate, especially for…