Related papers: Cryogenically Enhanced Laser-Induced Amorphous Pha…
We have achieved stimulated laser cooling of thermal rubidium atomic beams on a silicon chip. Following pre-collimation via a silicon microchannel array, we perform beam brightening via a blue-detuned optical molasses. Owing to the small…
Silicon nanocrystals are studied by time-resolved fluorescence spectroscopy. After laser excitation the bright and dark exciton ground state levels are populated at random, but subsequently the decay curves reveal a thermalization between…
The crystallization of amorphous solids under ultrafast laser irradiation represents a paradigm of non-equilibrium phase transitions, where the interplay between electromagnetic energy localization and atomic-scale dynamics remains largely…
Cryogenic temperatures are the prerequisite for many advanced scientific applications and technologies. The accurate determination of temperature in this range and at the submicrometer scale is, however, nontrivial. This is due to the fact…
We report on the morphological effects induced by the inhomogeneous absorption of cylindrically polarized femtosecond laser irradiation of silver (Ag) in sub-ablation conditions. A theoretical prediction of the role of surface plasmon…
A fundamental challenge of the quantum revolution is to efficiently interface the quantum computing systems operating at cryogenic temperatures with room temperature electronics and media for high data-rate communication. Current approaches…
Ultrathin microscale resistive thermometers are of key value to many applications. Here we have fabricated a laser machined 50 ${\mu}$m wide and 50 nm thick serpentine Pt thin film sensor capable of sensing temperatures up to 650 ${^\circ}$…
A molecular-dynamics thermal annealing model is proposed to investigate the mechanisms involved in picosecond pulsed laser ablation of crystalline silicon. In accordance with the thermal annealing model, a detailed description of the…
The preferentially (220) orientated polycrystalline silicon films have been fabricated by performing photon-involved rapid thermal annealing upon amorphous silicon films. In contrast, conventional thermal annealing of the silicon amorphous…
The present paper elucidates the physical mechanism that accounts for the principal/primary stages of the structuring process taking place upon irradiation of a conductive solid with multiple identical femtosecond laser pulses, based on the…
We report the instrumentation and experimental results of a cryogenic scanning microwave impedance microscope. The microwave probe and the scanning stage are located inside the variable temperature insert of a helium cryostat. Microwave…
Laser melting, such as that encountered during additive manufacturing (AM), produces extreme gradients of temperature in both space and time, which in turn influence microstructural development in the material. Qualification and model…
Hydrogenated amorphous silicon (a-Si:H) has garnered considerable attention in the semiconductor industry, particularly for its use in solar cells and passivation layers for high performance silicon solar cells, owing to its exceptional…
High-harmonic generation in solids has emerged as a powerful probe of ultrafast electron dynamics and lattice motion, and recent theoretical work has suggested that thermally driven lattice fluctuations can act as an effective source of…
Silicon nanocrystals (SiNCs) have been under active investigation in the last decades and have been considered as a promising candidate for many optoelectronic applications including highly-efficient solar cells. Some of the fundamental…
Water vitrifies if cooled at rates above $3 \cdot 10^5$ K/s. Surprisingly, this process cannot simply be reversed by heating the resulting amorphous ice at a similar rate. Instead, we have recently shown that the sample transiently…
Non-linear absorption phenomena induced by controlled irradiation with a femtosecond laser beam can be used to tailor materials properties within the bulk of substrates. One of the most successful applications of this technique is the…
The temperature dependence of the first-order phonon mode of single crystal of Silicon (Si) is determined by Raman scattering in a broad temperature range of 4-623 K. Our studies reveal the anomalous red-shift of the Raman active phonon…
X-ray laser-induced structural changes in silicon undergoing femtosecond melting have been investigated by using an x-ray pump-x-ray probe technique. The experimental results for different initial sample temperatures reveal that the onset…
The limited operational range of phase transition-based luminescence thermometers necessitates the exploration of new host materials exhibiting first-order structural phase transitions to broaden the applicability of this approach.…