Related papers: Low-field carrier mobilities in silicon irradiated…
The replacement of the existing endcap calorimeter in the Compact Muon Solenoid (CMS) detector for the high-luminosity LHC (HL-LHC), scheduled for 2027, will be a high granularity calorimeter. It will provide detailed position, energy, and…
Measurements of the drift velocities of electrons and holes as functions of electric field and temperature in high-purity n- and p-type silicon with <100> crystal orientation are presented. The measurements cover electric field values…
Hybrid silicon pixel detectors are currently used in the innermost tracking system of the Compact Muon Solenoid (CMS) experiment. Radiation tolerance up to fluences expected for a few years of running of the Large Hadron Collider (LHC) has…
This paper presents the possibility of using very thin Low Gain Avalanche Diodes (LGAD) ($25 - 50\mu$m thick) as tracking detector at future hadron colliders, where particle fluence will be above $10^{16}\; n_{eq}/cm^2$. In the present…
The mobility of electrons and holes in silicon depends on many parameters. Two of them are the electric field and the temperature. It has been observed previously that the mobility in the transition region between ohmic transport and…
Measurements of the drift velocities of electrons and holes as functions of electric field and temperature in high-purity n- and p-type silicon with <100> orientation are presented. The measurements cover electric field values between 2.5…
High mobility and dilute two-dimensional electron systems exhibit metallic behavior down to the lowest experimental temperatures. In studies of ionic liquid gated insulating silicon, we have observed transitions to a metallic state in low…
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $\mu$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot…
The relaxation dynamics of hot carriers in silicon (100) is studied via a novel holistic approach based on phase-resolved transient absorption spectroscopy with few-cycle optical pulses. After excitation by a sub-5 fs light pulse, strong…
For the high-luminosity phase of the Large Hadron Collider (HL-LHC), at the expected position of the innermost pixel detector layer of the CMS and ATLAS experiments, the estimated equivalent neutron fluence after 3000 fb$^{-1}$ is…
We present an approach to construct position-sensitive silicon detectors with an integrated cooling circuit. Tests on samples demonstrate that a very modest liquid flow very effectively cool the devices up to a power dissipation of over…
The HL-LHC will challenge the detectors with a nearly 10-fold increase in integrated luminosity compared to the previous LHC runs combined, thus the CMS detector will be upgraded to face the higher levels of radiation and the larger amounts…
The high-luminosity upgrade of the CERN LHC requires the replacement of the CMS tracking detector to cope with the increased radiation fluence while maintaining its excellent performance. An extensive R\&D program, aiming at using 3D pixel…
Silicon detector technologies are often employed for high energy particle physics applications due to their excellent radiation hardness. Radiation damage in the form of bulk or substrate damage is dependent on the incident particle species…
We present direct imaging measurements of charge transport across a 1 cm x 1 cm x 4 mm-thick crystal of high purity silicon ($\sim$15 k$\Omega$-cm) at temperatures of 5 K and 500 mK. We use these data to measure the lateral diffusion of…
Lead halide perovskite semiconductors are soft, polar, materials. The strong driving force for polaron formation (the dielectric electron-phonon coupling) is balanced by the light band effective-masses, leading to a strongly-interacting…
Silicon carbide (SiC) is a wide band gap semiconductor and an attractive candidate for applications in harsh environments such as space, fusion, or future high luminosity colliders. Due to the large band gap, the leakage currents in SiC…
The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier…
We investigate the radiation tolerance of p-type silicon pad sensors, indigenously developed for use in high-fluence environments relevant to heavy-ion collider experiments, cosmic-ray observatories, and deep-space missions. Single-pad test…
The effects of very low temperature on the electron transport in a [110] and [100] axially aligned unstrained silicon nanowires (SiNWs) are investigated. A combination of semi-empirical 10-orbital tight-binding method, density functional…