Related papers: Stable magnetic nanodomains engineered via Ga+-ion…
The control of antiferromagnets by magnetic fields represents a fundamental challenge in condensed matter physics, owing to their fully compensated magnetic order and vanishing net magnetization. Conventional methods rely on either…
Magnetic nano-objects possess great potential for more efficient data processing, storage and neuromorphic type of applications. Using high perpendicular magnetic anisotropy synthetic antiferromagnets in the form of multilayer-based…
The increasing need to store large amounts of information with an ultra-dense, reliable, low power and low cost memory device is driving aggressive efforts to improve upon current perpendicular magnetic recording technology. However, the…
Multiferroic devices hold profound promise for ultra-low energy computing in beyond Moore's law era. The magnetization of a magnetostrictive shape-anisotropic single-domain nanomagnet strain-coupled with a piezoelectric layer in a…
Controlling magnetism using voltage is highly desired for applications, but remains challenging due to fundamental contradiction between polarity and magnetism. Here we propose a mechanism to manipulate magnetic domain walls in…
The shape instability of magnetic domain walls under current is investigated in a ferromagnetic (Ga,Mn)(As,P) film with perpendicular anisotropy. Domain wall motion is driven by the spin transfer torque mechanism. A current density gradient…
Antiferromagnetic materials hold potential for use in spintronic devices with fast operation frequencies and field robustness. Despite the rapid progress in proof-of-principle functionality in recent years, there has been a notable lack of…
A first principles study is conducted to explore the changes in the magnetic structure of Mn\textsubscript{3}GaN under anisotropic biaxial strain. Mn\textsubscript{3}GaN is an antiperovskite with a structure similar to that of an ideal…
We propose here a high-frequency spin-Hall nano-oscillator based on a simple magnetic texture, such as a domain wall, located in an antiferromagnet with easy-axis anisotropy type. We show that the spin current, polarized along the…
We demonstrate patterned growth of epitaxial yttrium iron garnet (YIG) thin films using lithographically defined templates on gadolinium gallium garnet (GGG) substrates. The fabricated YIG nanostructures yield the desired crystallographic…
Spin waves offer intriguing novel perspectives for computing and signal processing, since their damping can be lower than the Ohmic losses in conventional CMOS circuits. For controlling the spatial extent and propagation of spin waves on…
Disorder in ultra-thin magnetic films can significantly hinder domain wall motion. One of the main issues on the path towards efficient domain wall based devices remains the characterization of the pinning landscape at the nanoscale. In…
We proposed a novel multilayer structure to realize the deterministic switching of perpendicularly magnetized layers by spin orbital torque from the spin Hall effect through stray field engineering. In our design, a pinned magnetic layer is…
Anisotropic strain engineering in epitaxial oxide films provides new opportunities to control the antiferromagnetic and structural properties crucial for advancements of antiferromagnetic spintronics. Here we report on a…
Magnetic-domain structure and dynamics play an important role in understanding and controlling the magnetic properties of two-dimensional magnets, which are of interest to both fundamental studies and applications[1-5]. However, the probe…
We present a phenomenological theory of altermagnets, that captures their unique magnetization dynamics and allows modelling magnetic textures in this new magnetic phase. Focusing on the prototypical d-wave altermagnets, e.g. RuO$_2$, we…
When a nanoribbon is bent under a homogeneous external magnetic field, the effective magnetic field inside becomes either homogeneous or inhomogeneous, depending on the direction of the field. This enables the selective creation of bulk,…
We investigate the role of lithographically-induced strain relaxation in a micron-scaled device fabricated from epitaxial thin films of the magnetostrictive alloy Fe81Ga19. The strain relaxation due to lithographic patterning induces a…
We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side of the constriction to either parallel or antiparallel…
The use of epitaxial layers for domain wall-based spintronic applications is often hampered by the presence of pinning sites. Here, we show that when depositing Mn4N(10 nm) epitaxial films, the replacement of MgO(001) by SrTiO3(001)…