Related papers: Comparative assessment of germanium-based spin-qub…
We present a design and modeling of a scalable quantum processor architecture utilizing hole-spin qubits defined in gate-controlled germanium (Ge) quantum dots, where coherent spin-phonon coupling is predicted to facilitate qubit…
Germanium (Ge) quantum wells are emerging as versatile platforms for quantum devices, supporting high-quality spin qubits and integration with superconducting leads. These applications benefit from strong intrinsic spin-orbit interaction…
The possibility of quantum computing with spins in germanium nanoscale transistors has recently attracted interest since it promises highly tuneable qubits that have encouraging coherence times. We here present the first complete theory of…
In the worldwide endeavor for disruptive quantum technologies, germanium is emerging as a versatile material to realize devices capable of encoding, processing, or transmitting quantum information. These devices leverage special properties…
Quantum electronic devices at the single impurity level demand an understanding of the physical attributes of dopants at an unprecedented accuracy. Germanium-based technologies have been developed recently, creating a necessity to adapt the…
Strained Ge ($\epsilon$-Ge) and strained Si ($\epsilon$-Si) buried quantum wells have enabled advanced spin-qubit quantum processors. However, in the absence of suitable lattice-matched substrates, $\epsilon$-Ge and $\epsilon$-Si are…
We present a device-level design study for a two-qubit module based on phonon-coupled germanium (Ge) hole-spin qubits targeted for operation at $1$--$4~\mathrm{K}$. Building on prior theoretical modeling of phonon-engineered Ge qubits and…
Planar germanium quantum wells have recently been shown to host hard-gapped superconductivity. Additionally, quantum dot spin qubits in germanium are well-suited for quantum information processing, with isotopic purification to a nuclear…
The prospect of building quantum circuits using advanced semiconductor manufacturing positions quantum dots as an attractive platform for quantum information processing. Extensive studies on various materials have led to demonstrations of…
Hole spin qubits in Ge/GeSi heterostructures benefit from the clean environment of epitaxial interfaces and from the intrinsic spin-orbit coupling that enables efficient electrical control, which makes them promising candidates for quantum…
Quantum computers require the systematic operation of qubits with high fidelity. For holes in germanium, the spin-orbit interaction allows for \textit{in situ} electric fast and high-fidelity qubit gates. However, the interaction also…
Strong spin-orbit coupling and relatively weak hyperfine interactions make germanium hole spin qubits a promising candidate for semiconductor quantum processors. The two-dimensional hole gas structure of strained Ge quantum wells serves as…
We theoretically investigate the properties of holes in a Si$_{x}$Ge$_{1-x}$/Ge/ Si$_{x}$Ge$_{1-x}$ quantum well in a perpendicular magnetic field that make them advantageous as qubits, including a large ($>$100~meV) intrinsic splitting…
Superconductors and semiconductors are crucial platforms in the field of quantum computing. They can be combined to hybrids, bringing together physical properties that enable the discovery of new emergent phenomena and provide novel…
We apply the full power of modern electronic band structure engineering and epitaxial heterostructures to design a transistor that can sense and control a single donor electron spin. Spin resonance transistors may form the technological…
Spin qubits defined by valence band hole states comprise an attractive candidate for quantum information processing due to their inherent coupling to electric fields enabling fast and scalable qubit control. In particular, heavy holes in…
Disorder in the heterogeneous material stack of semiconductor spin qubit systems introduces noise that compromises quantum information processing, posing a challenge to coherently control large-scale quantum devices. Here, we exploit…
In this perspective piece, I benchmark gallium arsenide, silicon, and germanium as material platforms for gate-defined quantum dot spin qubits. I focus on materials stacks, quantum dot architectures, bandstructure properties and qualifiers…
Planar germanium heterostructures hosting hole-spin qubits are among the leading platforms for scalable semiconductor-based quantum computing. Yet, device performance is hindered by significant quantum dot variability, which leads to…
Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface…