Related papers: Magnetization alignment in spin-transfer-torque ma…
The lack of certain crystalline symmetries in strong spin-orbit-coupled non-magnetic materials allows for the existence of uncoventional spin Hall responses, with electrically generated transverse spin currents possessing collinear flow and…
We propose an atom-superposition-based method for simulating spin-polarized scanning tunneling microscopy (SP-STM) from first principles. Our approach provides bias dependent STM images in high spatial resolution, with the capability of…
We study clean ferromagnet-superconductor-ferromagnet (FSF) nanostructures in which the magnetization of the F layers can be parallel (P) or antiparallel (AP). We consider the case where the thickness of the S layer is of order of the…
Application of sufficient lateral current to a heavy metal (HM) can switch the perpendicular magnetization orientation of adjacent ferromagnetic layer (FM) through spin-orbit torques (SOTs). The choice of the HM and its arrangement plays a…
Magnetic phase diagram of a spatially anisotropic, frustrated spin-1/2 Heisenberg antiferromagnet on a stacked square lattice is investigated using second-order spin-wave expansion. The effects of interlayer coupling and the spatial…
The discovery of efficient magnetization switching activated by the spin Hall effect (SHE)-induced spin-orbit torque (SOT) changed the course of magnetic random-access memory (MRAM) research and development. However, for systems with…
Future applications of spin-orbit torque will require new mechanisms to improve the efficiency for switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast, nanosecond scale…
Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, the scaling of MRAM technologies is heavily affected by…
To date, magnetic proximity effect (MPE) has only been conclusively observed in ferromagnet (FM) based systems. We report the observation of anomalous Hall effect and anisotropic magnetoresistance in angular dependent magnetoresistance…
In contrast to earlier studies performed on simple Co/Cu/Co sandwiches, we have investigated spin transfer effects in complex spin-valve pillars with a diameter of 130nm developed for current-perpendicular to the plane (CPP)…
Understanding the magnetization dynamics induced by spin transfer torques in perpendicularly magnetized magnetic tunnel junction nanopillars and its dependence on material parameters is critical to optimizing device performance. Here we…
Much effort has been devoted to device and materials engineering to realize nanoscale resistance random access memory (RRAM) for practical applications, but there still lacks a rational physical basis to be relied on to design scalable…
Spin currents can modify the magnetic state of ferromagnetic ultrathin films through spin-orbit torque. They may be generated by means of spin-orbit interaction by either bulk or interfacial phenomena. Electrical transport measurements…
In this work we focus on magnetic relaxation in Mn$_{80}$Ir$_{20}$(12 nm)/ Cu(6 nm)/ Py($d_\mathrm{F}$) antiferromagnet/Cu/ferromagnet (AFM/Cu/FM) multilayers with different thickness of the ferromagnetic permalloy layer. An effective…
Nanoscale superlattices with uniaxial ferromagnetic layers antiferromagnetically coupled through non-magnetic spacers are recently used as components of magnetoresistive and recording devices. In the last years intensive experimental…
We study the magnetic damping in the simplest of synthetic antiferromagnets, i.e. antiferromagnetically exchange-coupled spin valves in which applied magnetic fields tune the magnetic configuration to become noncollinear. We formulate the…
We fabricated a current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) nanopillar with a 1-nm-thick FePt free layer having perpendicular anisotropy using the alternate monatomic layer deposition method. Nanopillars consisting of…
Development of modern spintronic devices requires materials exhibiting specific magnetic effects. In this paper, we investigate a magnetization reversal mechanism in a [Co/Pdx]7/CoO/[Co/Pdy]7 thin-film composite where an antiferromagnet is…
Collinear antiferromagnetic (AFM) materials have unique promise of no stray fields, display ultrafast dynamics, and being robust against perturbation filed which motivates the extensive research of antiferromagnetic spintronics. However,…
Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse classes of materials and devices using electric currents, leading to novel spintronic memory and computing approaches. In parallel to spin transfer…