Related papers: Magnetization alignment in spin-transfer-torque ma…
Nanoscale magnetic tunnel junction plays a pivotal role in magnetoresistive random access memories. Successful implementation depends on a simultaneous achievement of low switching current for the magnetization switching by spin-transfer…
To optimize the design of STT-MRAM (spin-transfer torque magnetic random access memory), it is necessary to be able to predict switching (error) rates. For small elements, this can be done using a single-macrospin theory since the element…
Perpendicularly magnetized films showing small saturation magnetization, $M_\mathrm{s}$, are essential for spin-transfer-torque writing type magnetoresistive random access memories, STT-MRAMs. An intermetallic compound, {(Mn-Cr)AlGe} of the…
Many key electronic technologies (e.g., large-scale computing, machine learning, and superconducting electronics) require new memories that are fast, reliable, energy-efficient, and of low-impedance at the same time, which has remained a…
Spin-torque memristors were proposed in 2009, which could provide fast, low-power and infinite memristive behavior for large-density non-volatile memory and neuromorphic computing. However, the strict requirements of combining high…
Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ),…
Polarized Neutron Reflectometry and magnetometry measurements have been used to obtain a comprehensive picture of the magnetic structure of a series of La{2/3}Sr{1/3}MnO{3}/Pr{2/3}Ca{1/3}MnO{3} (LSMO/PCMO) superlattices, with varying…
We report the observation of the three-dimensional angular dependence of the spin Hall magnetoresistance (SMR) in a bilayer of the epitaxial antiferromagnetic insulator NiO(001) and the heavy metal Pt, without any ferromagnetic element. The…
With ultra-fast writing capacity and high reliability, the spin-orbit torque is regarded as a promising alternative to fabricate next-generation magnetic random access memory. However, the three-terminal setup can be challenging when…
Spin-polarized antiferromagnets (AFMs), including altermagnets, noncollinear AFMs, and two-dimensional layer-polarized AFMs, have emerged as transformative materials for next-generation spintronic and optoelectronic technologies. These…
Synthetic antiferromagnetic skyrmions (SAFsk) are nanoscale, topologically protected spin textures with strong potential for spintronic technologies because of their high stability and the absence of the skyrmion Hall effect. However,…
Recent development in memory technologies has introduced Spin-Transfer Torque Magnetic RAM (STT-MRAM) as the most promising replacement for SRAMs in on-chip cache memories. Besides its lower leakage power, higher density, immunity to…
Understanding the rich physics of magnetization dynamics in perpendicular synthetic antiferromagnets (p-SAFs) is crucial for developing next-generation spintronic devices. In this work, we systematically investigate the magnetization…
Spin Hall effect (SHE) induced reversal of perpendicular magnetization has attracted significant interest, due to its potential to lead to low power memory and logic devices. However, the switching requires an assisted in-plane magnetic…
Magnetic nanodevices usually include a free layer whose configuration can be changed by spin-polarized current via the spin transfer effect, and a fixed reference layer. Here, we demonstrate that the roles of the free and the reference…
Spin-valve based nanojunctions incorporating Co|Ni multilayers with perpendicular anisotropy were used to study spin-torque driven ferromagnetic resonance (ST-FMR) in a nonlinear regime. Perpendicular field swept resonance lines were…
The anisotropic magnetoresistance (AMR) in thin permalloy strips was calculated at each steps during magnetization by the finite element method. The magnetization at equilibrium under different external fields was obtained by micromagnetic…
A theoretical study is given for the self-oscillation excited in a spin torque oscillator (STO) consisting of an in-plane magnetized free layer and a perpendicularly magnetized pinned layer in the presence of a perpendicular magnetic field.…
Spin transfer torques (STTs) control magnetisation by electric currents, enabling a range of nano-scale spintronic applications. They can destabilise the equilibrium magnetisation state by counteracting magnetic relaxation. Here, we…
Magnetic tunnel junctions (MTJs) are key enablers of spintronic technologies used in a variety of applications including information storage, microwave generation and detection, as well as unconventional computing. Here, we present…