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Crossbar architectures have long been seen as a promising foundation for in-memory computing, using memristor arrays for high-density, energy-efficient analog computation. However, this conventional architecture suffers from a fundamental…
Implementing optical-based memory and utilizing it for computation on the nanoscale remains an attractive but still a challenging task. While significant progress was achieved in nanophotonics, allowing to explore nonlinear optical effects…
Fluidic iontronics offer a unique capability for emulating the chemical processes found in neurons. We extract multiple distinct chemically regulated synaptic features from an experimentally accessible conical microfluidic channel carrying…
Transition metal oxide memristors, or resistive random-access memory (RRAM) switches, are under intense development for storage-class memory because of their favorable operating power, endurance, speed, and density. Their commercial…
The phase offset between surface charge modulation and geometric undulations in a corrugated nanochannel provides a tunable mechanism for rectified, diode-like ion transport under purely pressure-driven conditions: reversing the applied…
We report gate-tunable memristive switching in patterned LaAlO3/SrTiO3 interfaces at cryogenic temperatures. The application of voltages in the order of a few volts to the back gate of the device allows controlling and switching-on and -off…
Memristive devices have been considered promising candidates for nature-inspired computing and in-memory information processing. However, experimental devices developed to date typically show significant variability and function at…
It is now widely accepted that memristive devices are perfect candidates for the emulation of biological synapses in neuromorphic systems. This is mainly because of the fact that like the strength of synapse, memristance of the memristive…
Non-volatile resistive switching, also known as memristor effect in two terminal devices, has emerged as one of the most important components in the ongoing development of high-density information storage, brain-inspired computing, and…
Continued progress in high speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two terminal device…
Ferroelecticity, one of the keys to realize nonvolatile memories owing to the remanent electric polarization, has been an emerging phenomenon in the two-dimensional (2D) limit. Yet the demonstrations of van der Waals (vdW) memories using 2D…
Beyond-Moore computing technologies are expected to provide a sustainable alternative to the von Neumann approach not only due to their down-scaling potential but also via exploiting device-level functional complexity at the lowest possible…
The opening or closing mechanism of a voltage-gated ion channel is triggered by the potential difference crossing the cell membrane in the nervous system. Based on this picture, we model the ion channel as a nanoscale two-terminal ionic…
We present a study of the pulsed current switching characteristics of spin-valve nanopillars with in-plane magnetized dilute permalloy and undiluted permalloy free layers in the ballistic regime at low temperature. The dilute permalloy free…
The advent of nanoscale memristors raised hopes of being able to build CMOL (CMOS/nanowire/moLecular) type ultra-dense in-memory-computing circuit architectures. In CMOL, nanoscale memristors would be fabricated at the intersection of…
Smart electronic circuits that support neuromorphic computing on the hardware level necessitate materials with memristive, memcapacitive, and neuromorphic-like functional properties; in short, the electronic response must depend on the…
Advanced neural interfaces mediate a bio-electronic link between the nervous system and microelectronic devices, bearing great potential as innovative therapy for various diseases. Spikes from a large number of neurons are recorded leading…
Nanofluidic systems exhibit transport characteristics that have made technological marvels such as desalination, energy harvesting, and highly sensitive biomolecule sensing possible by virtue of their ability to influence small currents due…
Monolithic three-dimensional integration of memory and logic circuits could dramatically improve performance and energy efficiency of computing systems. Some conventional and emerging memories are suitable for vertical integration,…
In this work, we propose valley-coupled spin-hall memories (VSH-MRAMs) based on monolayer WSe2. The key features of the proposed memories are (a) the ability to switch magnets with perpendicular magnetic anisotropy (PMA) via VSH effect and…