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The scaling of magnetic memory into nanometer size calls for a theoretical model to accurately predict the switching current. Previous models show large discrepancy with experiments in studying the spin-orbit torque switching of…

Mesoscale and Nanoscale Physics · Physics 2024-08-27 Xue Zhang , Zhengde Xu , Zhifeng Zhu

Recent results in electric-field control of magnetism have paved the way for the design of alternative magnetic and spintronic devices with enhanced functionalities and low power consumption. Among the diversity of reported magnetoelectric…

DC current induced magnetization reversal and magnetization oscillation was observed in 500 nm large size Co90Fe10/Cu/Ni80Fe20 pillars. A perpendicular external field enhanced the coercive field separation between the reference layer…

Mesoscale and Nanoscale Physics · Physics 2017-04-05 Linqiang Luo , Mehdi Kabir , Nam Dao , Salinporn Kittiwatanakul , Michael Cyberey , Stuart A. Wolf , Mircea Stan , Jiwei Lu

Spintronics uses spins, the intrinsic angular momentum of electrons, as an alternative for the electron charge. Its long-term goal is in the development of beyond-Moore low dissipation technology devices. Recent progress demonstrated the…

Mesoscale and Nanoscale Physics · Physics 2018-09-14 R. Lebrun , A. Ross , S. A. Bender , A. Qaiumzadeh , L. Baldrati , J. Cramer , A. Brataas , R. A. Duine , M. Kläui

Spin transfer torques allow the electrical manipulation of the magnetization at room temperature, which is desirable in spintronic devices such as spin transfer torque memories. When combined with spin-orbit coupling, they give rise to…

Electrical manipulation of magnetic order by current-induced spin torques lays the foundation for spintronics. One promising approach is encoding information in the N\'eel vector of antiferromagnetic (AFM) materials, particularly to…

Orbital Hall effect was recently discovered as a novel pathway for driving magnetic moment. However, the integration of orbital Hall effect in magnetic memories suffers from low orbital-to-spin conversion efficiency and incompatibility with…

Spin-orbit torque (SOT)-induced magnetization switching shows promise for realizing ultrafast and reliable spintronics devices. Bipolar switching of perpendicular magnetization via SOT is achieved under an in-plane magnetic field collinear…

Materials Science · Physics 2016-05-04 Shunsuke Fukami , Chaoliang Zhang , Samik DuttaGupta , Hideo Ohno

A new experimental test bed has been designed, built, and tested to evaluate the effect of the systems parameters on a reciprocating Active Magnetic Regenerator (AMR) near room temperature. Bulk gadolinium was used as the refrigerant,…

Materials Science · Physics 2015-11-10 Mohammadreza Ghahremani , Amir Aslani , Lawrence H. Bennett , Edward Della Torre

The efficient coupling between lattice degrees of freedom and spin degrees of freedom in magnetic materials can be used for refrigeration and energy conversion. This coupling is enhanced in materials exhibiting the giant magnetocaloric…

Twisted magnons (TMs) carrying orbital angular momentum (OAM) have attracted much attention from the magnonic community. The fabrication of such novel magnon state however is still challenging. Here we present a simple method to generate…

Mesoscale and Nanoscale Physics · Physics 2022-06-08 Z. -X. Li , Zhenyu Wang , Yunshan Cao , Peng Yan

Spintronics offers promising routes for efficient memory, logic, and computing technologies. The central challenge in spintronics is electrically manipulating and detecting magnetic states in devices. The electrical control of magnetization…

Mesoscale and Nanoscale Physics · Physics 2024-09-09 Silvia Damerio , Achintya Sunil , M. Mehraeen , Steven S. -L. Zhang , Can O. Avci

Intensive studies have been made on antiferromagnets as candidate materials for next generation memory bits due to their ultrafast dynamics reaching picosecond time scales. Recent demonstrations of electrical bidirectional switching of…

To face the challenges lying beyond current CMOS-based technology, new paradigms for information processing are required. Magnonics proposes to use spin waves to carry and process information, in analogy with photonics that relies on light…

The interface between a ferro-/ferrimagnetic insulator and a normal metal can support spin currents polarized collinear with and perpendicular to the magnetization direction. The flow of angular momentum perpendicular to the magnetization…

Mesoscale and Nanoscale Physics · Physics 2023-01-23 David A. Reiss , Piet W. Brouwer

With ultra-fast writing capacity and high reliability, the spin-orbit torque is regarded as a promising alternative to fabricate next-generation magnetic random access memory. However, the three-terminal setup can be challenging when…

Applied Physics · Physics 2017-06-07 Ming-Han Tsai , Po-Hung Lin , Kuo-Feng Huang , Hsiu-Hau Lin , Chih-Huang Lai

The field of magnonics, which utilizes propagating spin waves for nano-scale transmission and processing of information, has been significantly advanced by the advent of the spin-orbit torque. The latter phenomenon can allow one to overcome…

Mesoscale and Nanoscale Physics · Physics 2020-05-05 V. E. Demidov , S. Urazhdin , A. Anane , V. Cros , S. O. Demokritov

In the development of spin-based electronic devices, a particular challenge is the manipulation of the magnetic state with high speed and low power consumption. Although research has focused on the current-induced spin-orbit torque based on…

Applied Physics · Physics 2019-05-21 T. H. Kim , S. H. Han , B. K. Cho

Spin-orbit torque facilitates efficient magnetization switching via an in-plane current in perpendicularly magnetized heavy metal/ferromagnet heterostructures. The efficiency of spin-orbit-torque-induced switching is determined by the…

Angular momentum transport in magnetic multilayered structures plays a central role in spintronic physics and devices. The angular momentum currents or spin currents are carried by either quasi-particles such as electrons and magnons, or by…

Materials Science · Physics 2025-08-04 Kai Chen , Weiwei Lin , C. L. Chien , Shufeng Zhang