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Silicon carbide (SiC) is an important semiconductor material for fabricating power electronic devices that exhibit higher switch frequency, lower energy loss and substantial reduction both in size and weight in comparison with its Si-based…

Materials Science · Physics 2023-04-19 Guobin Wang , Da Sheng , Yunfan Yang , Hui Li , Congcong Chai , Zhenkai Xie , Wenjun Wang , Jian-gang Guo , Xiaolong Chen

A device being a pinnacle of development of an optical quantum memory should combine the capabilities of storage, inter-communication and processing of stored information. In particular, the ability to capture a train of optical pulses,…

We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion implantation into a silicon-on-insulator wafer. For this…

There is a pressing need for more accurate computational simulations of the opto-electronic properties of defects in materials to aid in the development of quantum sensing platforms. In this work, we explore how quantum computers could be…

Quantum coherence control is presented for wavelength convertible quantum memory in a double-lambda-type solid ensemble whose spin states are inhomogeneously broadened. Unlike typical atomic media whose spin decay is homogeneous, a spin…

Quantum Physics · Physics 2018-02-21 Byoung S. Ham

Integrated photonic circuits offer great promise for quantum technologies. However, due to the rapid propagation of light, many envisioned applications require efficient on-chip quantum memories with a programmable delay, compact footprint,…

Quantum Physics · Physics 2026-04-02 Stephan Rinner , Jonas Schmitt , Kilian Sandholzer , Andreas Reiserer

Chip-integrated optical frequency combs (OFCs) based on Kerr nonlinear resonators are of great significance given their scalability and wide range of applications. Broadband on-chip OFCs reaching visible wavelengths are especially valuable…

The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries. Nonetheless, because the electronic states of SiC defects can have sharp optical and spin transitions,…

Cubic silicon-carbide crystals (3C-SiC), known for their high thermal conductivity and in-plane stress, hold significant promise for the development of high-quality ($Q$) mechanical oscillators. We reveal degeneracy-breaking phenomena in…

Quantum Physics · Physics 2025-02-12 Yulong Liu , Huanying Sun , Qichun Liu , Haihua Wu , Mika A. Sillanpää , Tiefu Li

Silicon is the most developed electronic and photonic technological platform and hosts some of the highest-performance spin and photonic qubits developed to date. A hybrid quantum technology harnessing an efficient spin-photon interface in…

Crystal defects can confine isolated electronic spins and are promising candidates for solid-state quantum information. Alongside research focusing on nitrogen vacancy centers in diamond, an alternative strategy seeks to identify new spin…

Silicon Carbide (SiC) is a wide bandgap semiconductor material recently being used in replacement of traditional semiconductors for high-voltage power device applications. Radiation environments induce defects through displacement damage in…

Applied Physics · Physics 2023-09-08 Christopher Allen Grome

The defect induced magnetism has initiated a lot of interest in field of spintronics. In this regard, SiC is a promising material because of its unique properties under extreme conditions. Hence it will be very much interesting to…

Materials Science · Physics 2019-10-29 Gyanti Prakash Moharana , Rahul Kothari , S. K. Singh , N. Harish Kumar

The realization of scalable quantum networks for distribution of entanglement over long distances hinges on quantum repeaters. To outperform the exponential transmission loss in optical fibers, quantum repeaters must employ multiplexing…

Quantum Physics · Physics 2025-12-22 Anuj Sethia , Nasser Gohari Kamel , Daniel Oblak

Color centers in wide band gap semiconductors are prominent candidates for solid-state quantum technologies due to their attractive properties including optical interfacing, long coherence times, spin-photon and spin-spin entanglement, as…

Quantum Physics · Physics 2024-06-19 Sridhar Majety , Pranta Saha , Victoria A. Norman , Marina Radulaski

The negatively-charged silicon vacancy center ($\rm V_{Si}^-$) in silicon carbide (SiC) is an emerging color center for quantum technology covering quantum sensing, communication, and computing. Yet, limited information currently available…

Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificial atoms either formed by impurities or quantum dots have…

Color centers in diamond are promising platforms for quantum technologies. Most color centers in diamond discovered thus far emit in the visible or near-infrared wavelength range, which are incompatible with long-distance fiber…

Quantum networking and computing technologies demand scalable hardware with high-speed control for large systems of quantum devices. Solid-state platforms have emerged as promising candidates, offering scalable fabrication for a wide range…

Spin defects in silicon carbide (SiC) have attracted increasing interest due to their excellent optical and spin properties, which are useful in quantum information processing. In this paper, we systematically investigate the temperature…