Related papers: Deterministic positioning of circular Bragg gratin…
A method for the agile generation of the optical frequencies required for laser cooling and atom interferometry of rubidium is demonstrated. It relies on fiber Bragg grating technology to filter the output of an electro-optic modulator and…
Semiconductor quantum dots embedded in hybrid circular Bragg gratings are a promising platform for the efficient generation of nonclassical light. The scalable fabrication of multiple devices with similar performance is highly desirable for…
We report low-temperature transport spectroscopy of a graphene quantum dot fabricated by atomic force microscope nanolithography. The excellent spatial resolution of the atomic force microscope allows us to reliably fabricate quantum dots…
Strong coupling between quantum emitters and optical cavities is essential for quantum information processing, high-purity single-photon sources, and nonlinear quantum devices. Achieving this regime at room temperature in a compact,…
We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from $-3|e|$ to $+2|e|$. The resulting…
We have designed and fabricated a shallow-etched grating on gallium arsenide nanomembranes for efficient chip-to-fiber coupling in quantum photonic integrated circuits. Experimental results show that the grating provides a fiber-coupling…
We report a novel hemispherical micro-cavity that is comprised of a planar integrated semiconductor distributed Bragg reflector (DBR) mirror, and an external, concave micro-mirror having a radius of curvature $50\mathrm{\mu m}$. The…
InGaAs Quantum Dots embedded in GaAs barriers, grown in inverted tetrahedral recesses of 7 {\mu}m edge, have showed interesting characteristics in terms of uniformity and spectral narrowness of the emission. In this paper we present a study…
We present an approach to the molecular-beam epitaxy of high-Q planar GaAs-based microcavities in which the AlGaAs high-index layers of the distributed Bragg reflectors (DBRs) are replaced by short-period GaAs/AlAs superlattices (digital…
Multi-million atom simulations are performed to study stacking-angle ($\theta$) dependent strain profiles, electronic structure, and polarization-resolved optical modes from [110]-tilted quantum dot stacks (QDSs). Our calculations reveal…
The coherence of quantum dot qubits fabricated in semiconductors is often limited by charge noise from defects in gate dielectrics, which are material- and process-dependent. Characterizing these defects is an important step towards…
We report on the experimental study and numerical analysis of chiral light-matter coupling in deterministically fabricated quantum dot (QD) waveguide structures. We apply in-situ electron beam lithography to deterministically integrate…
We report a photoluminescence imaging system for locating single quantum emitters with respect to alignment features. Samples are interrogated in a 4~K closed-cycle cryostat by a high numerical aperture (NA=0.9, 100$\times$ magnification)…
Radial Bragg gratings are commonly used to enhance light extraction from quantum emitters, but lack a well-suited, fast simulation method for optimization beyond periodic designs. To overcome this limitation, we propose and demonstrate an…
We report on a new technique to split an atomic beam coherently with an easily adjustable splitting angle. In our experiment metastable helium atoms in the |{1s2s}^3S_1 M=1> state diffract from a polarization gradient light field formed by…
We report the fabrication of self-assembled, strain-free GaAs/Al$_{0.27}$Ga$_{0.73}$As quantum dot pairs which are laterally aligned in the growth plane, utilizing the droplet epitaxy technique and the anisotropic surface potentials of the…
We investigate the quality (Q) factor and the mode dispersion of single-defect nanocavities based on a triangular-lattice GaAs photonic-crystal (PC) membrane, which contain InAs quantum dots (QDs) as a broadband emitter. To obtain a high Q…
We present the direct heteroepitaxial growth of high-quality InGaAs quantum dots on silicon, enabling scalable, cost-effective quantum photonics devices compatible with CMOS technology. GaAs heterostructures are grown on silicon via a GaP…
The unique optical properties of quantum dots (QDs), size-tunable emission and high quantum yield, make them ideal candidates for applications in secure quantum communication, quantum computing, targeted single-cell and molecular tagging,…
We show that fully self-assembled optically-active quantum dots (QDs) embedded in MBE-grown GaAs/AlGaAs core-shell nanowires (NWs) are coupled to the NW mechanical motion. Oscillations of the NW modulate the QD emission energy in a broad…